Statistical Fluctuations in HfO<sub><italic><bold>x</bold></italic></sub> Resistive-Switching Memory: Part I - Set/Reset Variability
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: 2014شناسه الکترونیک: 10.1109/TED.2014.2330200
کلیدواژه(گان): Monte Carlo methods,hafnium compounds,insulating thin films,random-access storage,statistical distributions,CF 1-D structure,HfO<,sub>,x<,/sub>,RRAM,cell designing,cell downscaling,conductive filament,defect discrete nature,discrete fluctuation events,physics-based Monte Carlo model,programming operations,reset state distribution,resistive-switching memory,set state distribution,set-reset variability,statistical fluctuations,statistical variability,switching statist
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Statistical Fluctuations in HfO<sub><italic><bold>x</bold></italic></sub> Resistive-Switching Memory: Part I - Set/Reset Variability
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| contributor author | Ambrogio, Stefano | |
| contributor author | Balatti, S. | |
| contributor author | Cubeta, A. | |
| contributor author | Calderoni, Alessandro | |
| contributor author | Ramaswamy, Nirmal | |
| contributor author | Ielmini, Daniele | |
| date accessioned | 2020-03-13T00:11:54Z | |
| date available | 2020-03-13T00:11:54Z | |
| date issued | 2014 | |
| identifier issn | 0018-9383 | |
| identifier other | 6847211.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/1137899 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Statistical Fluctuations in HfO<sub><italic><bold>x</bold></italic></sub> Resistive-Switching Memory: Part I - Set/Reset Variability | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8319885 | |
| subject keywords | Monte Carlo methods | |
| subject keywords | hafnium compounds | |
| subject keywords | insulating thin films | |
| subject keywords | random-access storage | |
| subject keywords | statistical distributions | |
| subject keywords | CF 1-D structure | |
| subject keywords | HfO< | |
| subject keywords | sub> | |
| subject keywords | x< | |
| subject keywords | /sub> | |
| subject keywords | RRAM | |
| subject keywords | cell designing | |
| subject keywords | cell downscaling | |
| subject keywords | conductive filament | |
| subject keywords | defect discrete nature | |
| subject keywords | discrete fluctuation events | |
| subject keywords | physics-based Monte Carlo model | |
| subject keywords | programming operations | |
| subject keywords | reset state distribution | |
| subject keywords | resistive-switching memory | |
| subject keywords | set state distribution | |
| subject keywords | set-reset variability | |
| subject keywords | statistical fluctuations | |
| subject keywords | statistical variability | |
| subject keywords | switching statist | |
| identifier doi | 10.1109/TED.2014.2330200 | |
| journal title | Electron Devices, IEEE Transactions on | |
| journal volume | 61 | |
| journal issue | 8 | |
| filesize | 4660683 | |
| citations | 0 |