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Enhanced electroluminescence of all-inorganic colloidal quantum dot light-emitting diode by optimising the MoO<sub>3</sub> intermediate layer

contributor authorLiyuan Tang
contributor authorJunliang Zhao
contributor authorXiaoli Zhang
contributor authorHaitao Dai
contributor authorXiaowei Sun
date accessioned2020-03-13T00:10:54Z
date available2020-03-13T00:10:54Z
date issued2014
identifier issn1750-0443
identifier other6843045.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1137332?locale-attribute=en&show=full
formatgeneral
languageEnglish
publisherIET
titleEnhanced electroluminescence of all-inorganic colloidal quantum dot light-emitting diode by optimising the MoO<sub>3</sub> intermediate layer
typeJournal Paper
contenttypeMetadata Only
identifier padid8319204
subject keywordsII-VI semiconductors
subject keywordsaluminium
subject keywordscolloids
subject keywordselectroluminescence
subject keywordsindium compounds
subject keywordslight emitting diodes
subject keywordsmolybdenum compounds
subject keywordsnickel compounds
subject keywordsquantum dots
subject keywordstin compounds
subject keywordswide band gap semiconductors
subject keywordszinc compounds
subject keywordsITO-MoO<
subject keywordssub>
subject keywords3<
subject keywords/sub>
subject keywords-NiO
subject keywordsZnO-Al
subject keywordsall-inorganic colloidal quantum dot light-emitting diode performance
subject keywordselectroluminescence intensity
subject keywordshole injection
subject keywordsindium tin oxide layer
subject keywordsmolybdenum trioxide intermediate layer effects
subject keywordsnickel oxide layer
subject keywordsthermal evaporation proces
identifier doi10.1049/mnl.2014.0079
journal titleMicro &amp; Nano Letters, IET
journal volume9
journal issue6
filesize391862
citations0


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