Enhanced electroluminescence of all-inorganic colloidal quantum dot light-emitting diode by optimising the MoO<sub>3</sub> intermediate layer
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Year
: 2014DOI: 10.1049/mnl.2014.0079
Keyword(s): II-VI semiconductors,aluminium,colloids,electroluminescence,indium compounds,light emitting diodes,molybdenum compounds,nickel compounds,quantum dots,tin compounds,wide band gap semiconductors,zinc compounds,ITO-MoO<,sub>,3<,/sub>,-NiO,ZnO-Al,all-inorganic colloidal quantum dot light-emitting diode performance,electroluminescence intensity,hole injection,indium tin oxide layer,molybdenum trioxide intermediate layer effects,nickel oxide layer,thermal evaporation proces
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Enhanced electroluminescence of all-inorganic colloidal quantum dot light-emitting diode by optimising the MoO<sub>3</sub> intermediate layer
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| contributor author | Liyuan Tang | |
| contributor author | Junliang Zhao | |
| contributor author | Xiaoli Zhang | |
| contributor author | Haitao Dai | |
| contributor author | Xiaowei Sun | |
| date accessioned | 2020-03-13T00:10:54Z | |
| date available | 2020-03-13T00:10:54Z | |
| date issued | 2014 | |
| identifier issn | 1750-0443 | |
| identifier other | 6843045.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/1137332?locale-attribute=en | |
| format | general | |
| language | English | |
| publisher | IET | |
| title | Enhanced electroluminescence of all-inorganic colloidal quantum dot light-emitting diode by optimising the MoO<sub>3</sub> intermediate layer | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8319204 | |
| subject keywords | II-VI semiconductors | |
| subject keywords | aluminium | |
| subject keywords | colloids | |
| subject keywords | electroluminescence | |
| subject keywords | indium compounds | |
| subject keywords | light emitting diodes | |
| subject keywords | molybdenum compounds | |
| subject keywords | nickel compounds | |
| subject keywords | quantum dots | |
| subject keywords | tin compounds | |
| subject keywords | wide band gap semiconductors | |
| subject keywords | zinc compounds | |
| subject keywords | ITO-MoO< | |
| subject keywords | sub> | |
| subject keywords | 3< | |
| subject keywords | /sub> | |
| subject keywords | -NiO | |
| subject keywords | ZnO-Al | |
| subject keywords | all-inorganic colloidal quantum dot light-emitting diode performance | |
| subject keywords | electroluminescence intensity | |
| subject keywords | hole injection | |
| subject keywords | indium tin oxide layer | |
| subject keywords | molybdenum trioxide intermediate layer effects | |
| subject keywords | nickel oxide layer | |
| subject keywords | thermal evaporation proces | |
| identifier doi | 10.1049/mnl.2014.0079 | |
| journal title | Micro & Nano Letters, IET | |
| journal volume | 9 | |
| journal issue | 6 | |
| filesize | 391862 | |
| citations | 0 |