Dopingless super-steep impact ionisation MOS (dopingless-IMOS) based on workfunction engineering
ناشر:
سال
: 2014شناسه الکترونیک: 10.1049/el.2014.1072
کلیدواژه(گان): MOSFET,electrodes,elemental semiconductors,impact ionisation,ion implantation,masks,silicon,technology CAD (electronics),Si,charge plasma,charge plasma formation,dopingless super-steep impact ionisation MOS,dopingless-IMOS,impact-ionisation metal oxide semiconductor field effect transistor,intrinsic Debye length,intrinsic silicon film,metal electrode,n-type drain,p-type source,photo masking,random dopant fluctuation,two-dimensional TCAD Sentaurus,work-function engineering
کالکشن
:
-
آمار بازدید
Dopingless super-steep impact ionisation MOS (dopingless-IMOS) based on workfunction engineering
Show full item record
| contributor author | Singh, Sushil | |
| contributor author | Kondekar, P.N. | |
| date accessioned | 2020-03-13T00:09:18Z | |
| date available | 2020-03-13T00:09:18Z | |
| date issued | 2014 | |
| identifier issn | 0013-5194 | |
| identifier other | 6836733.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/1136354 | |
| format | general | |
| language | English | |
| publisher | IET | |
| title | Dopingless super-steep impact ionisation MOS (dopingless-IMOS) based on workfunction engineering | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8318023 | |
| subject keywords | MOSFET | |
| subject keywords | electrodes | |
| subject keywords | elemental semiconductors | |
| subject keywords | impact ionisation | |
| subject keywords | ion implantation | |
| subject keywords | masks | |
| subject keywords | silicon | |
| subject keywords | technology CAD (electronics) | |
| subject keywords | Si | |
| subject keywords | charge plasma | |
| subject keywords | charge plasma formation | |
| subject keywords | dopingless super-steep impact ionisation MOS | |
| subject keywords | dopingless-IMOS | |
| subject keywords | impact-ionisation metal oxide semiconductor field effect transistor | |
| subject keywords | intrinsic Debye length | |
| subject keywords | intrinsic silicon film | |
| subject keywords | metal electrode | |
| subject keywords | n-type drain | |
| subject keywords | p-type source | |
| subject keywords | photo masking | |
| subject keywords | random dopant fluctuation | |
| subject keywords | two-dimensional TCAD Sentaurus | |
| subject keywords | work-function engineering | |
| identifier doi | 10.1049/el.2014.1072 | |
| journal title | Electronics Letters | |
| journal volume | 50 | |
| journal issue | 12 | |
| filesize | 499441 | |
| citations | 0 |