Resistorless BJT bias and curvature compensation circuit at 3.4 nW for CMOS bandgap voltage references
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سال
: 2014شناسه الکترونیک: 10.1049/el.2013.3417
کلیدواژه(گان): CMOS integrated circuits,bipolar transistors,compensation,low-power electronics,reference circuits,BGRs,circuit analytical behaviour,current 3.5 nA,curvature compensation circuit,linear temperature dependence,nanoampere current consumption range,power 3.4 nW,resistorless BJT bias,resistorless bipolar junction transistor,size 0.18 mum,temperature 27 degC,temperature 293 K to 298 K,ultra-low-power CMOS bandgap voltage references,voltage 1 V,voltage 550 mV
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Resistorless BJT bias and curvature compensation circuit at 3.4 nW for CMOS bandgap voltage references
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| contributor author | Mattia, Oscar E. | |
| contributor author | Klimach, Hamilton | |
| contributor author | Bampi, Sergio | |
| date accessioned | 2020-03-13T00:09:16Z | |
| date available | 2020-03-13T00:09:16Z | |
| date issued | 2014 | |
| identifier issn | 0013-5194 | |
| identifier other | 6836719.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/1136339 | |
| format | general | |
| language | English | |
| publisher | IET | |
| title | Resistorless BJT bias and curvature compensation circuit at 3.4 nW for CMOS bandgap voltage references | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8318008 | |
| subject keywords | CMOS integrated circuits | |
| subject keywords | bipolar transistors | |
| subject keywords | compensation | |
| subject keywords | low-power electronics | |
| subject keywords | reference circuits | |
| subject keywords | BGRs | |
| subject keywords | circuit analytical behaviour | |
| subject keywords | current 3.5 nA | |
| subject keywords | curvature compensation circuit | |
| subject keywords | linear temperature dependence | |
| subject keywords | nanoampere current consumption range | |
| subject keywords | power 3.4 nW | |
| subject keywords | resistorless BJT bias | |
| subject keywords | resistorless bipolar junction transistor | |
| subject keywords | size 0.18 mum | |
| subject keywords | temperature 27 degC | |
| subject keywords | temperature 293 K to 298 K | |
| subject keywords | ultra-low-power CMOS bandgap voltage references | |
| subject keywords | voltage 1 V | |
| subject keywords | voltage 550 mV | |
| identifier doi | 10.1049/el.2013.3417 | |
| journal title | Electronics Letters | |
| journal volume | 50 | |
| journal issue | 12 | |
| filesize | 282484 | |
| citations | 1 |