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The Effect of 3-MeV Proton Irradiation on the Performance of InGaN/GaN MQWs Solar Cells

contributor authorZhen Bi
contributor authorJincheng Zhang
contributor authorLing Lv
contributor authorYue Hao
date accessioned2020-03-13T00:05:49Z
date available2020-03-13T00:05:49Z
date issued2014
identifier issn1041-1135
identifier other6823107.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1134270?show=full
formatgeneral
languageEnglish
publisherIEEE
titleThe Effect of 3-MeV Proton Irradiation on the Performance of InGaN/GaN MQWs Solar Cells
typeJournal Paper
contenttypeMetadata Only
identifier padid8315562
subject keywordsIII-V semiconductors
subject keywordsgallium compounds
subject keywordsindium compounds
subject keywordsphotoluminescence
subject keywordsproton effects
subject keywordsquantum well devices
subject keywordssemiconductor quantum wells
subject keywordssemiconductor thin films
subject keywordssolar cells
subject keywordsthin film devices
subject keywordswide band gap semiconductors
subject keywordsInGaN-GaN
subject keywordsMQW solar cells
subject keywordsconversion efficiency
subject keywordselectron volt energy 3 MeV
subject keywordsirradiation degradation
subject keywordsmultiple quantum well solar cells
subject keywordsphotoluminescence characteristics
subject keywordsproton fluence
subject keywordsproton irradiation effect
subject keywordsspace solar cells
subject keywordsthin film
subject keywordsFilms
subject keywordsGallium arsen
identifier doi10.1109/LPT.2014.2327072
journal titlePhotonics Technology Letters, IEEE
journal volume26
journal issue15
filesize1137716
citations0


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