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All-Graphene Planar Double Barrier Resonant Tunneling Diodes

contributor authorAl-Dirini, Feras
contributor authorHossain, Faruque M.
contributor authorNirmalathas, Ampalavanapillai
contributor authorSkafidas, E.
date accessioned2020-03-13T00:05:47Z
date available2020-03-13T00:05:47Z
date issued2014
identifier issn2168-6734
identifier other6823085.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1134252?show=full
formatgeneral
languageEnglish
publisherIEEE
titleAll-Graphene Planar Double Barrier Resonant Tunneling Diodes
typeJournal Paper
contenttypeMetadata Only
identifier padid8315542
subject keywordsEHT calculations
subject keywordsGreen'
subject keywordss function methods
subject keywordsgraphene
subject keywordsresonant tunnelling diodes
subject keywordsall-graphene planar double barrier resonant tunneling diode
subject keywordscurrent-voltage characteristics
subject keywordsextended Huckel method
subject keywordsgraphene nanoribbon
subject keywordsin-plane connection
subject keywordsnegative differential resistance
subject keywordsnonequilibrium Green'
subject keywordss function formalism
subject keywordsplanar architecture
subject keywordsquantum mechanical simulation results
subject keywordsreverse-to-forward current rectification ratio
subject keywordsAustralia
subject keywordsEducational institutions
subject keywordsFabrication
subject keywordsGraphene
subject keywordsNan
identifier doi10.1109/JEDS.2014.2327375
journal titleElectron Devices Society, IEEE Journal of the
journal volume2
journal issue5
filesize922717
citations6


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