Show simple item record

Effects of 3-MeV Protons on 4H-SiC Bipolar Devices and Integrated OR-NOR Gates

contributor authorSuvanam, Sethu Saveda
contributor authorLanni, Luigia
contributor authorMalm, B. Gunnar
contributor authorZetterling, Carl-Mikael
contributor authorHallé
contributor authorn, Anders
date accessioned2020-03-13T00:04:42Z
date available2020-03-13T00:04:42Z
date issued2014
identifier issn0018-9499
identifier other6819472.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1133587?show=full
formatgeneral
languageEnglish
publisherIEEE
titleEffects of 3-MeV Protons on 4H-SiC Bipolar Devices and Integrated OR-NOR Gates
typeJournal Paper
contenttypeMetadata Only
identifier padid8314758
subject keywordsbipolar logic circuits
subject keywordslogic gates
subject keywordsproton effects
subject keywordssilicon compounds
subject keywordswide band gap semiconductors
subject keywordsSPICE
subject keywordsTCAD
subject keywordsbipolar devices
subject keywordselectron volt energy 3 MeV
subject keywordsintegrated OR-NOR gates
subject keywordslogic circuits
subject keywordsproton irradiation
subject keywordsprotons
subject keywordsradiation effects
subject keywordsthe logic gates
subject keywordstransistor current
subject keywordsDegradation
subject keywordsLogic gates
subject keywordsProtons
subject keywordsRadiation effects
subject keywordsSilicon
subject keywordsSilicon carbide
subject keywordsTransistors
subject keywords4H-SiC
subject keywordsOR-NOR gates
subject keywordsbipolar integrated circuits
subject keywordsemitter couple logic (ECL)
subject keywordsproton radiation
identifier doi10.1109/TNS.2014.2310293
journal titleNuclear Science, IEEE Transactions on
journal volume61
journal issue4
filesize980640
citations0


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following Collection(s)

Show simple item record