Effects of 3-MeV Protons on 4H-SiC Bipolar Devices and Integrated OR-NOR Gates
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سال
: 2014شناسه الکترونیک: 10.1109/TNS.2014.2310293
کلیدواژه(گان): bipolar logic circuits,logic gates,proton effects,silicon compounds,wide band gap semiconductors,SPICE,TCAD,bipolar devices,electron volt energy 3 MeV,integrated OR-NOR gates,logic circuits,proton irradiation,protons,radiation effects,the logic gates,transistor current,Degradation,Logic gates,Protons,Radiation effects,Silicon,Silicon carbide,Transistors,4H-SiC,OR-NOR gates,bipolar integrated circuits,emitter couple logic (ECL),proton radiation
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آمار بازدید
Effects of 3-MeV Protons on 4H-SiC Bipolar Devices and Integrated OR-NOR Gates
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| contributor author | Suvanam, Sethu Saveda | |
| contributor author | Lanni, Luigia | |
| contributor author | Malm, B. Gunnar | |
| contributor author | Zetterling, Carl-Mikael | |
| contributor author | Hallé | |
| contributor author | n, Anders | |
| date accessioned | 2020-03-13T00:04:42Z | |
| date available | 2020-03-13T00:04:42Z | |
| date issued | 2014 | |
| identifier issn | 0018-9499 | |
| identifier other | 6819472.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/1133587?locale-attribute=fa | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Effects of 3-MeV Protons on 4H-SiC Bipolar Devices and Integrated OR-NOR Gates | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8314758 | |
| subject keywords | bipolar logic circuits | |
| subject keywords | logic gates | |
| subject keywords | proton effects | |
| subject keywords | silicon compounds | |
| subject keywords | wide band gap semiconductors | |
| subject keywords | SPICE | |
| subject keywords | TCAD | |
| subject keywords | bipolar devices | |
| subject keywords | electron volt energy 3 MeV | |
| subject keywords | integrated OR-NOR gates | |
| subject keywords | logic circuits | |
| subject keywords | proton irradiation | |
| subject keywords | protons | |
| subject keywords | radiation effects | |
| subject keywords | the logic gates | |
| subject keywords | transistor current | |
| subject keywords | Degradation | |
| subject keywords | Logic gates | |
| subject keywords | Protons | |
| subject keywords | Radiation effects | |
| subject keywords | Silicon | |
| subject keywords | Silicon carbide | |
| subject keywords | Transistors | |
| subject keywords | 4H-SiC | |
| subject keywords | OR-NOR gates | |
| subject keywords | bipolar integrated circuits | |
| subject keywords | emitter couple logic (ECL) | |
| subject keywords | proton radiation | |
| identifier doi | 10.1109/TNS.2014.2310293 | |
| journal title | Nuclear Science, IEEE Transactions on | |
| journal volume | 61 | |
| journal issue | 4 | |
| filesize | 980640 | |
| citations | 0 |