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Poly Si Nanowire Thin Film Transistors With Vacuum Gap Design

contributor authorTsung-Kuei Kang
contributor authorYsung-Yu Yang
contributor authorFeng-Tso Chien
date accessioned2020-03-13T00:02:33Z
date available2020-03-13T00:02:33Z
date issued2014
identifier issn0018-9383
identifier other6812163.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1132306?show=full
formatgeneral
languageEnglish
publisherIEEE
titlePoly Si Nanowire Thin Film Transistors With Vacuum Gap Design
typeJournal Paper
contenttypeMetadata Only
identifier padid8313260
subject keywordselemental semiconductors
subject keywordsetching
subject keywordshot carriers
subject keywordsinsulators
subject keywordsleakage currents
subject keywordsnanowires
subject keywordssemiconductor device reliability
subject keywordssilicon
subject keywordsthin film transistors
subject keywordstitanium compounds
subject keywordsvacuum microelectronics
subject keywordsSi
subject keywordsTiN
subject keywordsTiN layer
subject keywordschannel spacer surface
subject keywordschannel surface
subject keywordsdc hot-carrier stress
subject keywordsdevice reliability
subject keywordselectric field
subject keywordselectrical field
subject keywordsembedded vacuum gaps
subject keywordsgate-drain bias
subject keywordsinsulator
subject keywordsinversion layer
subject keywordskink effect
subject keywordsleakage current
subject keywordsoffset region
subject keywordspoly Si nanowire
subject keywordsselective etching technique
subject keywordssh
identifier doi10.1109/TED.2014.2318706
journal titleElectron Devices, IEEE Transactions on
journal volume61
journal issue6
filesize2963387
citations0


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