Poly Si Nanowire Thin Film Transistors With Vacuum Gap Design
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سال
: 2014شناسه الکترونیک: 10.1109/TED.2014.2318706
کلیدواژه(گان): elemental semiconductors,etching,hot carriers,insulators,leakage currents,nanowires,semiconductor device reliability,silicon,thin film transistors,titanium compounds,vacuum microelectronics,Si,TiN,TiN layer,channel spacer surface,channel surface,dc hot-carrier stress,device reliability,electric field,electrical field,embedded vacuum gaps,gate-drain bias,insulator,inversion layer,kink effect,leakage current,offset region,poly Si nanowire,selective etching technique,sh
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Poly Si Nanowire Thin Film Transistors With Vacuum Gap Design
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| contributor author | Tsung-Kuei Kang | |
| contributor author | Ysung-Yu Yang | |
| contributor author | Feng-Tso Chien | |
| date accessioned | 2020-03-13T00:02:33Z | |
| date available | 2020-03-13T00:02:33Z | |
| date issued | 2014 | |
| identifier issn | 0018-9383 | |
| identifier other | 6812163.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/1132306 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Poly Si Nanowire Thin Film Transistors With Vacuum Gap Design | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8313260 | |
| subject keywords | elemental semiconductors | |
| subject keywords | etching | |
| subject keywords | hot carriers | |
| subject keywords | insulators | |
| subject keywords | leakage currents | |
| subject keywords | nanowires | |
| subject keywords | semiconductor device reliability | |
| subject keywords | silicon | |
| subject keywords | thin film transistors | |
| subject keywords | titanium compounds | |
| subject keywords | vacuum microelectronics | |
| subject keywords | Si | |
| subject keywords | TiN | |
| subject keywords | TiN layer | |
| subject keywords | channel spacer surface | |
| subject keywords | channel surface | |
| subject keywords | dc hot-carrier stress | |
| subject keywords | device reliability | |
| subject keywords | electric field | |
| subject keywords | electrical field | |
| subject keywords | embedded vacuum gaps | |
| subject keywords | gate-drain bias | |
| subject keywords | insulator | |
| subject keywords | inversion layer | |
| subject keywords | kink effect | |
| subject keywords | leakage current | |
| subject keywords | offset region | |
| subject keywords | poly Si nanowire | |
| subject keywords | selective etching technique | |
| subject keywords | sh | |
| identifier doi | 10.1109/TED.2014.2318706 | |
| journal title | Electron Devices, IEEE Transactions on | |
| journal volume | 61 | |
| journal issue | 6 | |
| filesize | 2963387 | |
| citations | 0 |