Show simple item record

High-Frequency Gate-All-Around Vertical InAs Nanowire MOSFETs on Si Substrates

contributor authorJohansson, Susie
contributor authorMemisevic, Elvedin
contributor authorWernersson, Lars-Erik
contributor authorLind, Erik
date accessioned2020-03-12T23:52:32Z
date available2020-03-12T23:52:32Z
date issued2014
identifier issn0741-3106
identifier other6767079.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1126471?show=full
formatgeneral
languageEnglish
publisherIEEE
titleHigh-Frequency Gate-All-Around Vertical InAs Nanowire MOSFETs on Si Substrates
typeJournal Paper
contenttypeMetadata Only
identifier padid8306318
subject keywordsIII-V semiconductors
subject keywordsMOSFET
subject keywordsindium compounds
subject keywordsnanowires
subject keywordssilicon
subject keywordswide band gap semiconductors
subject keywordsInAs
subject keywordsSi
subject keywordsfrequency 155 GHz
subject keywordshigh-&
subject keywords#x03BA
subject keywordsgate dielectric
subject keywordshigh-frequency gate-all-around vertical nanowire MOSFET
subject keywordssmall-signal modeling
subject keywordstotal parasitic gate capacitance
subject keywordsCapacitance
subject keywordsLogic gates
subject keywordsMOSFET
subject keywordsRadio frequency
subject keywordsResistance
subject keywordsSubstrates
subject keywordsIII-V
subject keywordsIII??V
subject keywordsInAs
subject keywordsInAs.
subject keywordsMOSFET
subject keywordsNanowire
subject keywordsRF
subject keywordstransistor
identifier doi10.1109/LED.2014.2310119
journal titleElectron Device Letters, IEEE
journal volume35
journal issue5
filesize615193
citations0


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following Collection(s)

Show simple item record