High-Frequency Gate-All-Around Vertical InAs Nanowire MOSFETs on Si Substrates
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Year
: 2014DOI: 10.1109/LED.2014.2310119
Keyword(s): III-V semiconductors,MOSFET,indium compounds,nanowires,silicon,wide band gap semiconductors,InAs,Si,frequency 155 GHz,high-&,#x03BA,gate dielectric,high-frequency gate-all-around vertical nanowire MOSFET,small-signal modeling,total parasitic gate capacitance,Capacitance,Logic gates,MOSFET,Radio frequency,Resistance,Substrates,III-V,III??V,InAs,InAs.,MOSFET,Nanowire,RF,transistor
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High-Frequency Gate-All-Around Vertical InAs Nanowire MOSFETs on Si Substrates
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| contributor author | Johansson, Susie | |
| contributor author | Memisevic, Elvedin | |
| contributor author | Wernersson, Lars-Erik | |
| contributor author | Lind, Erik | |
| date accessioned | 2020-03-12T23:52:32Z | |
| date available | 2020-03-12T23:52:32Z | |
| date issued | 2014 | |
| identifier issn | 0741-3106 | |
| identifier other | 6767079.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/1126471?locale-attribute=en | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | High-Frequency Gate-All-Around Vertical InAs Nanowire MOSFETs on Si Substrates | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8306318 | |
| subject keywords | III-V semiconductors | |
| subject keywords | MOSFET | |
| subject keywords | indium compounds | |
| subject keywords | nanowires | |
| subject keywords | silicon | |
| subject keywords | wide band gap semiconductors | |
| subject keywords | InAs | |
| subject keywords | Si | |
| subject keywords | frequency 155 GHz | |
| subject keywords | high-& | |
| subject keywords | #x03BA | |
| subject keywords | gate dielectric | |
| subject keywords | high-frequency gate-all-around vertical nanowire MOSFET | |
| subject keywords | small-signal modeling | |
| subject keywords | total parasitic gate capacitance | |
| subject keywords | Capacitance | |
| subject keywords | Logic gates | |
| subject keywords | MOSFET | |
| subject keywords | Radio frequency | |
| subject keywords | Resistance | |
| subject keywords | Substrates | |
| subject keywords | III-V | |
| subject keywords | III??V | |
| subject keywords | InAs | |
| subject keywords | InAs. | |
| subject keywords | MOSFET | |
| subject keywords | Nanowire | |
| subject keywords | RF | |
| subject keywords | transistor | |
| identifier doi | 10.1109/LED.2014.2310119 | |
| journal title | Electron Device Letters, IEEE | |
| journal volume | 35 | |
| journal issue | 5 | |
| filesize | 615193 | |
| citations | 0 |