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The emission structures stability in alternating electrical fields

date accessioned2020-03-12T23:26:16Z
date available2020-03-12T23:26:16Z
date issued2014
identifier other6891975.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1111582?show=full
formatgeneral
languageEnglish
publisherIEEE
titleThe emission structures stability in alternating electrical fields
typeConference Paper
contenttypeMetadata Only
identifier padid8280412
subject keywordsBiCMOS integrated circuits
subject keywordscarrier lifetime
subject keywordselemental semiconductors
subject keywordsgermanium
subject keywordsp-i-n photodiodes
subject keywordsGe
subject keywordsbandwidth degradation
subject keywordshigh-performance BiCMOS process
subject keywordsminority-carrier diffusion
subject keywordsminority-carrier lifetime
subject keywordsnondepleted weakly doped regions
subject keywordsnondoping implantations
subject keywordsphotonic BiCMOS process
subject keywordsthermal steps
subject keywordswaveguide-coupled Ge lateral pin photodiodes
subject keywordsAnnealing
subject keywordsBandwidth
subject keywordsBiCMOS integrated circuits
subject keywordsImplants
subject keywordsPIN photodiodes
subject keywordsPhotonics
subject keywordsSilicides
subject keywordsBiCMOS
subject keywordsGe photodiode
subject keywordsSilicon photonic
identifier doi10.1109/BCTM.2014.6981279
journal titleacuum Electron Sources Conference (IVESC), 2014 Tenth International
filesize198529
citations0
contributor rawauthorFilippov, S.V. , Popov, E.O. , Kolosko, A.G. , Romanov, P.A.


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