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Integrated high-voltage (HV) Schottky diode for power management ICs

contributor authorMistele, D.
contributor authorBerkovitch, N.
contributor authorLevin, S.
contributor authorShapira, S.
date accessioned2020-03-12T22:22:38Z
date available2020-03-12T22:22:38Z
date issued2014
identifier other7005851.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1080920?locale-attribute=fa&show=full
formatgeneral
languageEnglish
publisherIEEE
titleIntegrated high-voltage (HV) Schottky diode for power management ICs
typeConference Paper
contenttypeMetadata Only
identifier padid8217357
subject keywordsIII-V semiconductors
subject keywordsn MOSFET
subject keywordsn aluminium compounds
subject keywordsn gallium compounds
subject keywordsn nanoelectronics
subject keywordsn power transistors
subject keywordsn technology CAD (electronics)
subject keywordsn wide band gap semiconductors
subject keywordsn 3D technology computer-aided design
subject keywordsn AlGaN-GaN
subject keywordsn TCAD
subject keywordsn fin dimensions
subject keywordsn fin geometry
subject keywordsn fin-shaped-channel field-effect transistor
subject keywordsn heterostructure recessed-gate nanoscale FinFET
subject keywordsn power transistor
subject keywordsn Aluminum gallium nitride
subject keywordsn FinFETs
subject keywordsn Gallium nitride
subject keywordsn HEMTs
subject keywordsn L
identifier doi10.1109/ISCE.2014.6884475
journal titlelectrical & Electronics Engineers in Israel (IEEEI), 2014 IEEE 28th Convention of
filesize475066
citations0


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