Integrated high-voltage (HV) Schottky diode for power management ICs
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Year
: 2014DOI: 10.1109/ISCE.2014.6884475
Keyword(s): III-V semiconductors,n MOSFET,n aluminium compounds,n gallium compounds,n nanoelectronics,n power transistors,n technology CAD (electronics),n wide band gap semiconductors,n 3D technology computer-aided design,n AlGaN-GaN,n TCAD,n fin dimensions,n fin geometry,n fin-shaped-channel field-effect transistor,n heterostructure recessed-gate nanoscale FinFET,n power transistor,n Aluminum gallium nitride,n FinFETs,n Gallium nitride,n HEMTs,n L
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Integrated high-voltage (HV) Schottky diode for power management ICs
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| contributor author | Mistele, D. | |
| contributor author | Berkovitch, N. | |
| contributor author | Levin, S. | |
| contributor author | Shapira, S. | |
| date accessioned | 2020-03-12T22:22:38Z | |
| date available | 2020-03-12T22:22:38Z | |
| date issued | 2014 | |
| identifier other | 7005851.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/1080920 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Integrated high-voltage (HV) Schottky diode for power management ICs | |
| type | Conference Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8217357 | |
| subject keywords | III-V semiconductors | |
| subject keywords | n MOSFET | |
| subject keywords | n aluminium compounds | |
| subject keywords | n gallium compounds | |
| subject keywords | n nanoelectronics | |
| subject keywords | n power transistors | |
| subject keywords | n technology CAD (electronics) | |
| subject keywords | n wide band gap semiconductors | |
| subject keywords | n 3D technology computer-aided design | |
| subject keywords | n AlGaN-GaN | |
| subject keywords | n TCAD | |
| subject keywords | n fin dimensions | |
| subject keywords | n fin geometry | |
| subject keywords | n fin-shaped-channel field-effect transistor | |
| subject keywords | n heterostructure recessed-gate nanoscale FinFET | |
| subject keywords | n power transistor | |
| subject keywords | n Aluminum gallium nitride | |
| subject keywords | n FinFETs | |
| subject keywords | n Gallium nitride | |
| subject keywords | n HEMTs | |
| subject keywords | n L | |
| identifier doi | 10.1109/ISCE.2014.6884475 | |
| journal title | lectrical & Electronics Engineers in Israel (IEEEI), 2014 IEEE 28th Convention of | |
| filesize | 475066 | |
| citations | 0 |