[Copyright notice]
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سال
: 2014شناسه الکترونیک: 10.1109/AERO.2014.6836479
کلیدواژه(گان): ionisation,n memristors,n radiation hardening (electronics),n RRAM component,n incident energetic ion,n ionizing dose,n metal oxide-based memristor,n radiation-induced displacement damage,n resistive random access memory component,n Ions,n Memristors,n Metals,n Protons,n Radiation effects,n Silicon
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[Copyright notice]
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| date accessioned | 2020-03-12T21:56:54Z | |
| date available | 2020-03-12T21:56:54Z | |
| date issued | 2014 | |
| identifier other | 6966985.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/1066129 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | [Copyright notice] | |
| type | Conference Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8199883 | |
| subject keywords | ionisation | |
| subject keywords | n memristors | |
| subject keywords | n radiation hardening (electronics) | |
| subject keywords | n RRAM component | |
| subject keywords | n incident energetic ion | |
| subject keywords | n ionizing dose | |
| subject keywords | n metal oxide-based memristor | |
| subject keywords | n radiation-induced displacement damage | |
| subject keywords | n resistive random access memory component | |
| subject keywords | n Ions | |
| subject keywords | n Memristors | |
| subject keywords | n Metals | |
| subject keywords | n Protons | |
| subject keywords | n Radiation effects | |
| subject keywords | n Silicon | |
| identifier doi | 10.1109/AERO.2014.6836479 | |
| journal title | esign and Technology in Electronic Packaging (SIITME), 2014 IEEE 20th International Symposium for | |
| filesize | 82053 | |
| citations | 0 |