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Analysis of InAs-Si heterojunction nanowire tunnel FETs: Extreme confinement vs. bulk

contributor authorCarrillo-Nunez, H.
contributor authorLuisier, M.
contributor authorSchenk, A.
date accessioned2020-03-12T21:35:58Z
date available2020-03-12T21:35:58Z
date issued2014
identifier other6948772.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1054097?show=full
formatgeneral
languageEnglish
publisherIEEE
titleAnalysis of InAs-Si heterojunction nanowire tunnel FETs: Extreme confinement vs. bulk
typeConference Paper
contenttypeMetadata Only
identifier padid8184607
subject keywordsgeometry
subject keywordsn optimisation
subject keywordsn pattern classification
subject keywordsn text analysis
subject keywordsn concept labeling
subject keywordsn dynamic text classification
subject keywordsn feature optimization
subject keywordsn feature selection
subject keywordsn feature selection methods
subject keywordsn geometric feature optimization method
subject keywordsn geometric optimization method labeling
subject keywordsn text classification
subject keywordsn text data sets
subject keywordsn textual classifying work
subject keywordsn unstructured text document form
subject keywordsn Classification algorithms
subject keywordsn Filtering algorithms
subject keywordsn Measurement
subject keywordsn Optimization
identifier doi10.1109/IAdCC.2014.6779386
journal titleolid State Device Research Conference (ESSDERC), 2014 44th European
filesize4017853
citations0


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