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The effect of X-Ray radiation dose rate on Triple-Gate SOI FinFETs parameters

contributor authorBordallo, C.C.M.
contributor authorTeixeira, F.F.
contributor authorSilveira, M.A.G.
contributor authorMartino, J.A.
contributor authorAgopian, P.G.D.
contributor authorSimoen, E.
contributor authorClaeys, C.
date accessioned2020-03-12T21:23:35Z
date available2020-03-12T21:23:35Z
date issued2014
identifier other6940085.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1047501?locale-attribute=fa&show=full
formatgeneral
languageEnglish
publisherIEEE
titleThe effect of X-Ray radiation dose rate on Triple-Gate SOI FinFETs parameters
typeConference Paper
contenttypeMetadata Only
identifier padid8176653
subject keywordsAccuracy
subject keywordsDamping
subject keywordsKernel
subject keywordsOscillators
subject keywordsSecurity
subject keywordsSupport vector machines
subject keywordsTraining
subject keywordsevolution strategies
subject keywordsinter-area oscillations
subject keywordssupport vector machines
subject keywordswide-area monitoring systems
identifier doi10.1109/PSCC.2014.7038317
journal titleicroelectronics Technology and Devices (SBMicro), 2014 29th Symposium on
filesize1065137
citations0


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