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A path to 10% efficiency for tin sulfide devices

contributor authorMangan, N.M.
contributor authorBrandt, R.E.
contributor authorSteinmann, V.
contributor authorJaramillo, R.
contributor authorLi, J.V.
contributor authorPoindexter, J.R.
contributor authorHartman, K.
contributor authorLeizhi Sun
contributor authorGordon, R.G.
contributor authorBuonassisi, T.
date accessioned2020-03-12T21:06:59Z
date available2020-03-12T21:06:59Z
date issued2014
identifier other6925404.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1037512?show=full
formatgeneral
languageEnglish
publisherIEEE
titleA path to 10% efficiency for tin sulfide devices
typeConference Paper
contenttypeMetadata Only
identifier padid8163843
subject keywordselectrostatic actuators
subject keywordsmicroswitches
subject keywordsreliability
subject keywordscapacitive RF MEMS switches
subject keywordscontact degradation
subject keywordselectrical properties
subject keywordselectrostatic actuation
subject keywordsmembrane internal stress
subject keywordsmodified floating metal
subject keywordsrepetitive impact cycles
subject keywordstemperature 25 degC
subject keywordstemperature 40 degC
subject keywordstemperature 55 degC
subject keywordsContacts
subject keywordsDegradation
subject keywordsRadio frequency
subject keywordsReliability
subject keywordsStress
subject keywordsSwitches
subject keywordsTemperature measurement
subject keywordsRF MEMS
subject keywordscontact degradation
subject keywordsreliability
subject keywordsrepetitive impact cycles
subject keywordstemperature effect
identifier doi10.1109/ESSDERC.2014.6948760
journal titlehotovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
filesize675403
citations0


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