A path to 10% efficiency for tin sulfide devices
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Year
: 2014DOI: 10.1109/ESSDERC.2014.6948760
Keyword(s): electrostatic actuators,microswitches,reliability,capacitive RF MEMS switches,contact degradation,electrical properties,electrostatic actuation,membrane internal stress,modified floating metal,repetitive impact cycles,temperature 25 degC,temperature 40 degC,temperature 55 degC,Contacts,Degradation,Radio frequency,Reliability,Stress,Switches,Temperature measurement,RF MEMS,contact degradation,reliability,repetitive impact cycles,temperature effect
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A path to 10% efficiency for tin sulfide devices
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| contributor author | Mangan, N.M. | |
| contributor author | Brandt, R.E. | |
| contributor author | Steinmann, V. | |
| contributor author | Jaramillo, R. | |
| contributor author | Li, J.V. | |
| contributor author | Poindexter, J.R. | |
| contributor author | Hartman, K. | |
| contributor author | Leizhi Sun | |
| contributor author | Gordon, R.G. | |
| contributor author | Buonassisi, T. | |
| date accessioned | 2020-03-12T21:06:59Z | |
| date available | 2020-03-12T21:06:59Z | |
| date issued | 2014 | |
| identifier other | 6925404.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/1037512 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | A path to 10% efficiency for tin sulfide devices | |
| type | Conference Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8163843 | |
| subject keywords | electrostatic actuators | |
| subject keywords | microswitches | |
| subject keywords | reliability | |
| subject keywords | capacitive RF MEMS switches | |
| subject keywords | contact degradation | |
| subject keywords | electrical properties | |
| subject keywords | electrostatic actuation | |
| subject keywords | membrane internal stress | |
| subject keywords | modified floating metal | |
| subject keywords | repetitive impact cycles | |
| subject keywords | temperature 25 degC | |
| subject keywords | temperature 40 degC | |
| subject keywords | temperature 55 degC | |
| subject keywords | Contacts | |
| subject keywords | Degradation | |
| subject keywords | Radio frequency | |
| subject keywords | Reliability | |
| subject keywords | Stress | |
| subject keywords | Switches | |
| subject keywords | Temperature measurement | |
| subject keywords | RF MEMS | |
| subject keywords | contact degradation | |
| subject keywords | reliability | |
| subject keywords | repetitive impact cycles | |
| subject keywords | temperature effect | |
| identifier doi | 10.1109/ESSDERC.2014.6948760 | |
| journal title | hotovoltaic Specialist Conference (PVSC), 2014 IEEE 40th | |
| filesize | 675403 | |
| citations | 0 |