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High-frequency integrated gate drivers for half-bridge GaN power stage

contributor authorYuanzhe Zhang , Rodriguez, M. , Maksimovic, D.
date accessioned2020-03-12T20:34:43Z
date available2020-03-12T20:34:43Z
date issued2014
identifier other6877120.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1018740?locale-attribute=fa&show=full
formatgeneral
languageEnglish
publisherIEEE
titleHigh-frequency integrated gate drivers for half-bridge GaN power stage
typeConference Paper
contenttypeMetadata Only
identifier padid8142979
subject keywordselectric current measurement
subject keywordselectric impedance measurement
subject keywordsleakage currents
subject keywordsmodules
subject keywordspackaging
subject keywordsphotovoltaic power systems
subject keywordsPV module
subject keywordshigh voltage system
subject keywordsimpedance measurement
subject keywordsleakage current measurement
subject keywordsleakage current path analysis
subject keywordsphotovoltaic module
subject keywordsphotovoltaic module packaging material
subject keywordspower loss
subject keywordsCurrent measurement
subject keywordsLaminates
subject keywordsLeakage currents
subject keywordsPackaging
subject keywordsPhotovoltaic systems
subject keywordsPV Module
subject keywordsPotential Induced Degradation
subject keywordsReliability
subject keywordsSystem Voltage Stress
identifier doi10.1109/PVSC.2014.6925320
journal titleontrol and Modeling for Power Electronics (COMPEL), 2014 IEEE 15th Workshop on
filesize804446
citations0


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