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Spin accumulation in n-Ge on Si with sputtered Mn<inf>5</inf>Ge<inf>3</inf>C<inf>0.8</inf>-contacts

date accessioned2020-03-12T20:30:14Z
date available2020-03-12T20:30:14Z
date issued2014
identifier other6874647.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1016758?show=full
formatgeneral
languageEnglish
publisherIEEE
titleSpin accumulation in n-Ge on Si with sputtered Mn<inf>5</inf>Ge<inf>3</inf>C<inf>0.8</inf>-contacts
typeConference Paper
contenttypeMetadata Only
identifier padid8140675
subject keywordsembedded systems
subject keywordsintegrated circuit interconnections
subject keywordssystem buses
subject keywordssystem-on-chip
subject keywordsCONMAX
subject keywordsFPGA
subject keywordsIBM
subject keywordsPLB crossbar switch
subject keywordsSOC designs
subject keywordsSPARTAN
subject keywordsembedded system
subject keywordsflexible busmatrix
subject keywordsflexible centre arbiter
subject keywordsheterogeneous system component
subject keywordsmultichannel AHB busmatrix
subject keywordsmultichannel AMBA AHB
subject keywordsmultiple arbitration technique
subject keywordson chip bus
subject keywordsround robin
subject keywordssilicore
subject keywordssystem on chip design
subject keywordsxillinx simulators
subject keywordsBandwidth
subject keywordsChip scale packaging
subject keywordsComplexity theory
subject keywordsMemory management
subject keywordsRound robin
subject keywordsSwitches
subject keywordsSys
identifier doi10.1109/ICCSP.2014.6950166
journal titleilicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
filesize1296523
citations0
contributor rawauthorFischer, I.A. , Li-Te Chang , Surgers, C. , Chiussi, S. , Wang, K.L. , Schulze, J.


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