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The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices

contributor authorMorgan, K.A.
contributor authorRuomeng Huang
contributor authorPearce, S.
contributor authorDe Groot, C.H.
date accessioned2020-03-12T20:21:08Z
date available2020-03-12T20:21:08Z
date issued2014
identifier other6865158.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1011346?show=full
formatgeneral
languageEnglish
publisherIEEE
titleThe effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices
typeConference Paper
contenttypeMetadata Only
identifier padid8133869
subject keywordsgovernment data processing
subject keywordsKingdom of Bahrain
subject keywordscitizens acceptance
subject keywordscitizens readiness
subject keywordsdiscomfort
subject keywordse-participation tools
subject keywordsinnovation
subject keywordsinsecurity
subject keywordsoptimum
subject keywordspolicy making process
subject keywordstransparency
subject keywordsuse-of-technology
subject keywordsEducational institutions
subject keywordsElectronic government
subject keywordsIndexes
subject keywordsInformation technology
subject keywordsOptimized production technology
subject keywordsTechnological innovation
subject keywordsE-participation
subject keywordsacceptance
subject keywordsadoption
subject keywordscitizens
subject keywordse-Democracy
subject keywordsreadiness
identifier doi10.1109/i-Society.2014.7009029
journal titleircuits and Systems (ISCAS), 2014 IEEE International Symposium on
filesize1232812
citations0


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