Show simple item record

Experimental study of programming saturation in low-coupling planar high-k/metal gate nand flash memory cells using a dedicated test structure

date accessioned2020-03-12T20:04:26Z
date available2020-03-12T20:04:26Z
date issued2014
identifier other6849365.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1000782?show=full
formatgeneral
languageEnglish
publisherIEEE
titleExperimental study of programming saturation in low-coupling planar high-k/metal gate nand flash memory cells using a dedicated test structure
typeConference Paper
contenttypeMetadata Only
identifier padid8121546
subject keywordsBatteries
subject keywordsGenerators
subject keywordsGenetic algorithms
subject keywordsMathematical model
subject keywordsOptimization
subject keywordsRadiation effects
subject keywordsReliability
subject keywordsAnnual Cost Of the System
subject keywordsGenetic Algorithm
subject keywordsLoss Of Load Probability
subject keywordsOptimization
identifier doi10.1109/INDICON.2014.7030528
journal titleemory Workshop (IMW), 2014 IEEE 6th International
filesize863829
citations0
contributor rawauthorBlomme, P. , Chi Lim Tan , Souriau, L. , Versluijs, J. , Van den bosch, G. , Van Houdt, J.


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following Collection(s)

Show simple item record