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Author : Cheng Peng; Liangcai Wu; Zhitang Song; Feng Rao; Min Zhu; Xuelai Li; Bo Liu; Limin Cheng; Songlin Feng; Pingxiong Yang; Junhao Chu

Year: 2011

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RESET Distribution Improvement of Phase Change Memory: The Impact of Pre-Programming

Type: Journal Paper

Author : Yuchan Wang; Xiaogang Chen; Yan Cheng; Xilin Zhou; Shilong Lv; Yifeng Chen; Yueqing Wang; Mi Zhou; Houpeng Chen; Yiyun Zhang; Zhitang Song; Gaoming Feng

Publisher: IEEE

Year: 2014

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Study and Improvement on Tungsten Plug Corrosion in CMP Process for PCRAM

Ceria concentration effect on chemical mechanical polishing of optical glass

Experimental and theoretical study of silicon-doped Sb2Te3 thin films: Structure and phase stability

Chemical mechanical polishing of stainless steel foil as flexible substrate

General Flame Approach to Chainlike MFe 2 O 4 Spinel (M = Cu, Ni, Co, Zn) Nanoaggregates for Reduction of Nitroaromatic Compounds

3-D Resistance Model for Phase-Change Memory Cell

Understanding the crystallization behavior of as-deposited Ti–Sb–Te alloys through real-time radial distribution functions

Cost-Effective Schottky-Barrier Diode Array With Ni–Silicidation Accessing Low Power Phase-Change Memory

Performance improvement of Sb2Te3 phase change material by Al doping

RESET Distribution Improvement of Phase Change Memory: The Impact of Pre-Programming

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Study and Improvement on Tungsten Plug Corrosion in CMP Process for PCRAM

Ceria concentration effect on chemical mechanical polishing of optical glass

Experimental and theoretical study of silicon-doped Sb2Te3 thin films: Structure and phase stability

Chemical mechanical polishing of stainless steel foil as flexible substrate

General Flame Approach to Chainlike MFe 2 O 4 Spinel (M = Cu, Ni, Co, Zn) Nanoaggregates for Reduction of Nitroaromatic Compounds

3-D Resistance Model for Phase-Change Memory Cell

Understanding the crystallization behavior of as-deposited Ti–Sb–Te alloys through real-time radial distribution functions

Cost-Effective Schottky-Barrier Diode Array With Ni&#x2013;Silicidation Accessing Low Power Phase-Change Memory

Performance improvement of Sb2Te3 phase change material by Al doping

RESET Distribution Improvement of Phase Change Memory: The Impact of Pre-Programming

Cost-Effective Schottky-Barrier Diode Array With Ni–Silicidation Accessing Low Power Phase-Change Memory