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Author : Kawanago, T.; Kakushima, K.; Kataoka, Yasuyuki; Nishiyama, A.; Sugii, Nobuyuki; Wakabayashi, H.; Tsutsui, K.; Natori, K.; Iwai, Hisato

Publisher: IEEE

Year: 2014

Enhanced oxidation of sic substrates using La<inf>2</inf>O<inf>3</inf> capped annealing and a proposal for uniform LaSiON gate dielectric formation

Type: Conference Paper

Author : Lei, Y.M.; Munekiyo, S.; Kawanago, T.; Kakushima, K.; Kataoka, K.; Wakabayashi, H.; Tsutsui, K.; Natori, K.; Iwai, H.; Furuhashi, M.; Miura, N.

Publisher: IEEE

Year: 2014

Passivation of SiO<inf>2</inf>/SiC interface with La<inf>2</inf>O<inf>3</inf> capped oxidation

Type: Conference Paper

Author : Munekiyo, S.; Lei, Y.M.; Natori, K.; Iwai, H.; Kawanago, T.; Kakushima, K.; Kataoka, K.; Nishiyama, A.; Sugii, N.; Wakabayashi, H.; Tsutsui, K.; Furuhashi, M.; Miura, N.; Yamakawa, S.

Publisher: IEEE

Year: 2014

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Compact Modeling of Quasi-Ballistic Silicon Nanowire MOSFETs

Mechanical power factor as performance index of bilateral teleoperation systems

A Design Method of Communication Disturbance Observer for Time-Delay Compensation, Taking the Dynamic Property of Network Disturbance Into Account

Time-Delay Compensation by Communication Disturbance Observer for Bilateral Teleoperation Under Time-Varying Delay

Gate Technology Contributions to Collapse of Drain Current in AlGaN/GaN Schottky HEMT

Enhanced oxidation of sic substrates using La<inf>2</inf>O<inf>3</inf> capped annealing and a proposal for uniform LaSiON gate dielectric formation

Passivation of SiO<inf>2</inf>/SiC interface with La<inf>2</inf>O<inf>3</inf> capped oxidation

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Compact Modeling of Quasi-Ballistic Silicon Nanowire MOSFETs

Mechanical power factor as performance index of bilateral teleoperation systems

A Design Method of Communication Disturbance Observer for Time-Delay Compensation, Taking the Dynamic Property of Network Disturbance Into Account

Time-Delay Compensation by Communication Disturbance Observer for Bilateral Teleoperation Under Time-Varying Delay

Gate Technology Contributions to Collapse of Drain Current in AlGaN/GaN Schottky HEMT

Enhanced oxidation of sic substrates using La<inf>2</inf>O<inf>3</inf> capped annealing and a proposal for uniform LaSiON gate dielectric formation

Passivation of SiO<inf>2</inf>/SiC interface with La<inf>2</inf>O<inf>3</inf> capped oxidation