Gate Technology Contributions to Collapse of Drain Current in AlGaN/GaN Schottky HEMT
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سال
: 2014شناسه الکترونیک: 10.1109/TED.2014.2299556
کلیدواژه(گان): III-V semiconductors,Schottky gate field effect transistors,aluminium compounds,gallium compounds,high electron mobility transistors,leakage currents,nickel,titanium compounds,tungsten,vacancies (crystal),wide band gap semiconductors,AlGaN-GaN,C-V characteristics,Ni,Schottky HEMT,Schottky gate,Schottky metals,TiN,W,drain current collapse,electric field,electrical characteristics,electrically active defects,electron trapping,frequency dispersion,gate edge,gate leakage cu
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Gate Technology Contributions to Collapse of Drain Current in AlGaN/GaN Schottky HEMT
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| contributor author | Kawanago, T. | |
| contributor author | Kakushima, K. | |
| contributor author | Kataoka, Yasuyuki | |
| contributor author | Nishiyama, A. | |
| contributor author | Sugii, Nobuyuki | |
| contributor author | Wakabayashi, H. | |
| contributor author | Tsutsui, K. | |
| contributor author | Natori, K. | |
| contributor author | Iwai, Hisato | |
| date accessioned | 2020-03-12T18:45:10Z | |
| date available | 2020-03-12T18:45:10Z | |
| date issued | 2014 | |
| identifier issn | 0018-9383 | |
| identifier other | 6732947.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/968954 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Gate Technology Contributions to Collapse of Drain Current in AlGaN/GaN Schottky HEMT | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8003172 | |
| subject keywords | III-V semiconductors | |
| subject keywords | Schottky gate field effect transistors | |
| subject keywords | aluminium compounds | |
| subject keywords | gallium compounds | |
| subject keywords | high electron mobility transistors | |
| subject keywords | leakage currents | |
| subject keywords | nickel | |
| subject keywords | titanium compounds | |
| subject keywords | tungsten | |
| subject keywords | vacancies (crystal) | |
| subject keywords | wide band gap semiconductors | |
| subject keywords | AlGaN-GaN | |
| subject keywords | C-V characteristics | |
| subject keywords | Ni | |
| subject keywords | Schottky HEMT | |
| subject keywords | Schottky gate | |
| subject keywords | Schottky metals | |
| subject keywords | TiN | |
| subject keywords | W | |
| subject keywords | drain current collapse | |
| subject keywords | electric field | |
| subject keywords | electrical characteristics | |
| subject keywords | electrically active defects | |
| subject keywords | electron trapping | |
| subject keywords | frequency dispersion | |
| subject keywords | gate edge | |
| subject keywords | gate leakage cu | |
| identifier doi | 10.1109/TED.2014.2299556 | |
| journal title | Electron Devices, IEEE Transactions on | |
| journal volume | 61 | |
| journal issue | 3 | |
| filesize | 1804095 | |
| citations | 0 |