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Quantitative residual stress imaging of multicrystalline, quasi-mono, and thin kerfless silicon wafers by infrared birefringence and sectioning

Type: Conference Paper

Author : Castellanos, S.; Buonassisi, T.

Publisher: IEEE

Year: 2014

In situ PL imaging toward real-time plating process control

Type: Conference Paper

Author : Lee, J.Z.; Sullivan, J.T.; Michaelson, L.; Munoz, K.; Tyson, T.; Gallegos, A.; Buonassisi, T.

Publisher: IEEE

Year: 2014

Inferring dislocation recombination strength in multicrystalline silicon via etch pit geometry analysis

Type: Conference Paper

Author : Castellanos, S.; Hofstetter, J.; Kivambe, M.; Rinio, M.; Lai, B.; Buonassisi, T.

Publisher: IEEE

Year: 2014

Pathway to predict solar cell efficiencies from as-grown multicrystalline silicon bricks

Type: Conference Paper

Author : Wagner, H.; Hofstetter, J.; Mitchell, B.; Morishige, A.E.; Buonassisi, T.; Altermatt, P.P.

Publisher: IEEE

Year: 2014

High speed growth of square-like Si single bulk crystals with a size of 23 × 23 cm<sup>2</sup> for solar cells using the noncontact crucible method

Type: Conference Paper

Author : Nakajima, K.; Murai, R.; Morishita, K.; Powell, D.M.; Kivambe, M.; Buonassisi, T.

Publisher: IEEE

Year: 2014

>1.8 millisecond effective lifetime in n-type silicon grown by the noncontact crucible method

Type: Conference Paper

Author : Kivambe, M.; Powell, D.M.; Ann Jensen, M.; Morishige, A.E.; Nakajima, K.; Murai, R.; Morishita, K.; Buonassisi, T.

Publisher: IEEE

Year: 2014

Elucidating and engineering recombination-active metal-rich precipitates in n-type multicrystalline silicon

Type: Conference Paper

Author : Morishige, A.E.; Fenning, D.P.; Hofstetter, J.; Ann Jensen, M.; Ramanathan, S.; Wang, C.; Lai, B.; Buonassisi, T.

Publisher: IEEE

Year: 2014

The distribution of chromium in multicrystalline silicon

Type: Conference Paper

Author : Jensen, M.A.; Hofstetter, J.; Fenning, D.P.; Morishige, A.E.; Coletti, G.; Lai, B.; Buonassisi, T.

Publisher: IEEE

Year: 2014

High-lifetime kerfless silicon wafers

Type: Conference Paper

Author : Powell, D.M.; Hofstetter, J.; Fenning, D.P.; Ruiying Hao; Jensen, M.A.; Ravi, T.S.; Buonassisi, T.

Publisher: IEEE

Year: 2014

X-ray beam induced current—a synchrotron radiation based technique for the in situ analysis of recombination properties and chemical nature of metal clusters in silicon

Type: Journal Paper

Author : Vyvenko, O. F.; Buonassisi, T.; Istratov, A. A.; Hieslmair, H.; Thompson, A. C.; Schindler, R.; Weber, E. R.

Year: 2002

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Quantitative residual stress imaging of multicrystalline, quasi-mono, and thin kerfless silicon wafers by infrared birefringence and sectioning

In situ PL imaging toward real-time plating process control

Inferring dislocation recombination strength in multicrystalline silicon via etch pit geometry analysis

Pathway to predict solar cell efficiencies from as-grown multicrystalline silicon bricks

High speed growth of square-like Si single bulk crystals with a size of 23 × 23 cm<sup>2</sup> for solar cells using the noncontact crucible method

>1.8 millisecond effective lifetime in n-type silicon grown by the noncontact crucible method

Elucidating and engineering recombination-active metal-rich precipitates in n-type multicrystalline silicon

The distribution of chromium in multicrystalline silicon

High-lifetime kerfless silicon wafers

X-ray beam induced current—a synchrotron radiation based technique for the in situ analysis of recombination properties and chemical nature of metal clusters in silicon

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Quantitative residual stress imaging of multicrystalline, quasi-mono, and thin kerfless silicon wafers by infrared birefringence and sectioning

In situ PL imaging toward real-time plating process control

Inferring dislocation recombination strength in multicrystalline silicon via etch pit geometry analysis

Pathway to predict solar cell efficiencies from as-grown multicrystalline silicon bricks

High speed growth of square-like Si single bulk crystals with a size of 23 &#x00D7; 23 cm<sup>2</sup> for solar cells using the noncontact crucible method

&#x003E;1.8 millisecond effective lifetime in n-type silicon grown by the noncontact crucible method

Elucidating and engineering recombination-active metal-rich precipitates in n-type multicrystalline silicon

The distribution of chromium in multicrystalline silicon

High-lifetime kerfless silicon wafers

X-ray beam induced current—a synchrotron radiation based technique for the in situ analysis of recombination properties and chemical nature of metal clusters in silicon

High speed growth of square-like Si single bulk crystals with a size of 23 × 23 cm<sup>2</sup> for solar cells using the noncontact crucible method

>1.8 millisecond effective lifetime in n-type silicon grown by the noncontact crucible method