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Degradations of Threshold Voltage, Mobility, and Drain Current and the Dependence on Transistor Geometry For Stressing at 77 K and 300 K

نوع: Journal Paper

نویسنده : Guoying Wu; Deptuch, Grzegorz W.; Hoff, Jim R.; Ping Gui

ناشر: IEEE

سال: 2014

Impact of the Substrate Orientation on CHC Reliability in n-FinFETs—Separation of the Various Contributions

نوع: Journal Paper

نویسنده : Tallarico, Andrea Natale; Moonju Cho; Franco, Jacopo; Ritzenthaler, R.; Togo, Mitsuhiro; Horiguchi, Naoto; Groeseneken, Guido; Crupi, Felice

ناشر: IEEE

سال: 2014

A Novel Quasi-3-D Interface-Trapped-Charge-Induced Threshold Voltage Model for Quadruple-Gate MOSFETs, Including Equivalent Number of Gates

نوع: Journal Paper

نویسنده : Chiang Te-Kuang

ناشر: IEEE

سال: 2014

Opportunistic Situational Awareness Dissemination at the Tactical Edge

نوع: Conference Paper

نویسنده : Brown, J.David; Salmanian, Mazda; Li, Ming

ناشر: IEEE

سال: 2014

Context requirements in future access networks

نوع: Conference Paper

نویسنده : Paredes, Bruna; Bento, Susana; Brandao, Simao; Ferreira, Ricardo; Shaphari, Ali; Teixeira, Antonio; Lima, Mario

ناشر: IEEE

سال: 2014

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Degradations of Threshold Voltage, Mobility, and Drain Current and the Dependence on Transistor Geometry For Stressing at 77 K and 300 K

Impact of the Substrate Orientation on CHC Reliability in n-FinFETs—Separation of the Various Contributions

A Novel Quasi-3-D Interface-Trapped-Charge-Induced Threshold Voltage Model for Quadruple-Gate MOSFETs, Including Equivalent Number of Gates

Opportunistic Situational Awareness Dissemination at the Tactical Edge

Context requirements in future access networks

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Degradations of Threshold Voltage, Mobility, and Drain Current and the Dependence on Transistor Geometry For Stressing at 77 K and 300 K

Impact of the Substrate Orientation on CHC Reliability in n-FinFETs&#x2014;Separation of the Various Contributions

A Novel Quasi-3-D Interface-Trapped-Charge-Induced Threshold Voltage Model for Quadruple-Gate MOSFETs, Including Equivalent Number of Gates

Opportunistic Situational Awareness Dissemination at the Tactical Edge

Context requirements in future access networks

Impact of the Substrate Orientation on CHC Reliability in n-FinFETs—Separation of the Various Contributions