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RISEffect of High Field on Electron Mobility of InGaN
— Temperature and doping dependencies of
electron mobility in InGaN structure has been calculated in
steady-state and transient situation. The following
scattering mechanisms, i.e, impurity, polar optical phonon...
Temperature and doping dependencies of hot electron transport properties in bulk GaP, InP and Ga0.5In0.5P
ensemble Monte Carlo simulation has been
carriedout to study electron transport properties in GaP,
InP and Ga0.5In0.5P materials. The simulation results show
that intervalley electron transfer plays a ...
Influence of Electron-Plasmon Scattering on Low-Field Mobility in ZnO
Temperature and doping dependencies of electron mobility in ZnO semiconductor has been calculated using an iterative
technique. The following scattering mechanisms, i.e., impurity, polar optical phonon, acoustic phonon, piezoelectric, and...
Two-dimensional particle modeling of submicrometer ZnO MESFET based on an ensemble Monte Carlo calculation including five-valley band structure model
been investigated. The following scattering mechanisms, that is
impurity, polar optical phonon, acoustic phonon, alloy and piezoelectric are included in the calculation.
Ionized impurity scattering has been treated beyond the born...
Two-Dimensional Particle Modeling of Submicrometer ZnO MESFET Based on an Ensemble Monte Carlo Calculation Including Five-valley Band Structure Model
. The following scattering mechanisms, i.e, impurity, polar optical phonon, acoustic phonon, alloy and piezoelectric are included in the calculation. Ionized impurity scattering has been treated beyond the Born approximation using the phase-shift analysis...