Two-dimensional particle modeling of submicrometer ZnO MESFET based on an ensemble Monte Carlo calculation including five-valley band structure model
سال
: 2011
چکیده: A Monte Carlo method has been developed for the study of electron transport properties in ZnO
MESFET for high field, using a five-valley conduction band model. The effects of upper valleys on the
characteristics of ZnO MESFETs have been investigated. The following scattering mechanisms, that is
impurity, polar optical phonon, acoustic phonon, alloy and piezoelectric are included in the calculation.
Ionized impurity scattering has been treated beyond the born approximation using the phase-shift
analysis. The simulation results show that on the drain side of the gate region, hot electrons attained
enough energy to be scattered into the upper satellite conduction valleys. Approximately 17% of the
electrons occupy the higher valleys (mainly U and M valley). The simulated device geometries and
doping are matched to the nominal parameters described for the experimental structures as closely as
possible, and the predicted drain current and other electrical characteristics for the simulated device
including upper valleys show much closer agreement with the available experimental data.
MESFET for high field, using a five-valley conduction band model. The effects of upper valleys on the
characteristics of ZnO MESFETs have been investigated. The following scattering mechanisms, that is
impurity, polar optical phonon, acoustic phonon, alloy and piezoelectric are included in the calculation.
Ionized impurity scattering has been treated beyond the born approximation using the phase-shift
analysis. The simulation results show that on the drain side of the gate region, hot electrons attained
enough energy to be scattered into the upper satellite conduction valleys. Approximately 17% of the
electrons occupy the higher valleys (mainly U and M valley). The simulated device geometries and
doping are matched to the nominal parameters described for the experimental structures as closely as
possible, and the predicted drain current and other electrical characteristics for the simulated device
including upper valleys show much closer agreement with the available experimental data.
کلیدواژه(گان): Particle modeling,submicrometer,ionized impurity,polar optical phonon
کالکشن
:
-
آمار بازدید
Two-dimensional particle modeling of submicrometer ZnO MESFET based on an ensemble Monte Carlo calculation including five-valley band structure model
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| contributor author | هادی عربشاهی | en |
| contributor author | Hadi Arabshahi | fa |
| date accessioned | 2020-06-06T14:36:14Z | |
| date available | 2020-06-06T14:36:14Z | |
| date issued | 2011 | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/3403636 | |
| description abstract | A Monte Carlo method has been developed for the study of electron transport properties in ZnO MESFET for high field, using a five-valley conduction band model. The effects of upper valleys on the characteristics of ZnO MESFETs have been investigated. The following scattering mechanisms, that is impurity, polar optical phonon, acoustic phonon, alloy and piezoelectric are included in the calculation. Ionized impurity scattering has been treated beyond the born approximation using the phase-shift analysis. The simulation results show that on the drain side of the gate region, hot electrons attained enough energy to be scattered into the upper satellite conduction valleys. Approximately 17% of the electrons occupy the higher valleys (mainly U and M valley). The simulated device geometries and doping are matched to the nominal parameters described for the experimental structures as closely as possible, and the predicted drain current and other electrical characteristics for the simulated device including upper valleys show much closer agreement with the available experimental data. | en |
| language | English | |
| title | Two-dimensional particle modeling of submicrometer ZnO MESFET based on an ensemble Monte Carlo calculation including five-valley band structure model | en |
| type | Journal Paper | |
| contenttype | External Fulltext | |
| subject keywords | Particle modeling | en |
| subject keywords | submicrometer | en |
| subject keywords | ionized impurity | en |
| subject keywords | polar optical phonon | en |
| journal title | Journal of Engineering and Technology Research | fa |
| pages | 209-216 | |
| journal volume | 3 | |
| journal issue | 7 | |
| identifier link | https://profdoc.um.ac.ir/paper-abstract-1023133.html | |
| identifier articleid | 1023133 |