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Now showing items 1-10 of 10

Charge-plasma-based super-steep negative capacitance junctionless tunnel field effect transistor: design and performance

Type: Journal Paper

Author : Singh, Sushil; Pal, Parama; Kondekar, P.N.

Publisher: IET

Year: 2014

Cost effective, reliable and accurate maintenance model for SHP plants using RCM

Type: Conference Paper

Author : Kumar, R. , Singal, S.K.

Publisher: IEEE

Year: 2014

Charge-Plasma Based Process Variation Immune Junctionless Transistor

Type: Journal Paper

Author : Sahu, Chitrakant; Singh, Jaskirat

Publisher: IEEE

Year: 2014

Design and performance projection of symmetric bipolar charge-plasma transistor on SOI

Type: Journal Paper

Author : Sahu, Chitrakant; Ganguly, Anshuman; Singh, Jaskirat

Publisher: IET

Year: 2014

Junctionless Impact Ionization MOS: Proposal and Investigation

Type: Journal Paper

Author : Ramaswamy, S.; Kumar, M.J.

Publisher: IEEE

Year: 2014

Dopingless super-steep impact ionisation MOS (dopingless-IMOS) based on workfunction engineering

Type: Journal Paper

Author : Singh, Sushil; Kondekar, P.N.

Publisher: IET

Year: 2014

Thin-Film Bipolar Transistors on Recrystallized Polycrystalline Silicon Without Impurity Doped Junctions: Proposal and Investigation

Type: Journal Paper

Author : Nadda, Kanika; Kumar, M.J.

Publisher: IEEE

Year: 2014

Cumulative Point—L<sub>1</sub> Between Two Positively Charged Plasma Structures (3-D Strata)

Type: Journal Paper

Author : Vysikaylo, P.I.

Publisher: IEEE

Year: 2014

In-Built N<sup>+</sup> Pocket p-n-p-n Tunnel Field-Effect Transistor

Type: Journal Paper

Author : Abdi, Dawit; Kumar, M.J.

Publisher: IEEE

Year: 2014

Measurement of axonal fiber connectivity in consciousness evaluation

Type: Conference Paper

Author : Leisman, Gerry; Rojas, Rafael Rodriguez; Batista, Karla; Carballo, Maylen; Morales, Juan M.; Iturria, Yasser; Machado, Calixto

Publisher: IEEE

Year: 2014

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Charge-plasma-based super-steep negative capacitance junctionless tunnel field effect transistor: design and performance

Cost effective, reliable and accurate maintenance model for SHP plants using RCM

Charge-Plasma Based Process Variation Immune Junctionless Transistor

Design and performance projection of symmetric bipolar charge-plasma transistor on SOI

Junctionless Impact Ionization MOS: Proposal and Investigation

Dopingless super-steep impact ionisation MOS (dopingless-IMOS) based on workfunction engineering

Thin-Film Bipolar Transistors on Recrystallized Polycrystalline Silicon Without Impurity Doped Junctions: Proposal and Investigation

Cumulative Point—L<sub>1</sub> Between Two Positively Charged Plasma Structures (3-D Strata)

In-Built N<sup>+</sup> Pocket p-n-p-n Tunnel Field-Effect Transistor

Measurement of axonal fiber connectivity in consciousness evaluation

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Charge-plasma-based super-steep negative capacitance junctionless tunnel field effect transistor: design and performance

Cost effective, reliable and accurate maintenance model for SHP plants using RCM

Charge-Plasma Based Process Variation Immune Junctionless Transistor

Design and performance projection of symmetric bipolar charge-plasma transistor on SOI

Junctionless Impact Ionization MOS: Proposal and Investigation

Dopingless super-steep impact ionisation MOS (dopingless-IMOS) based on workfunction engineering

Thin-Film Bipolar Transistors on Recrystallized Polycrystalline Silicon Without Impurity Doped Junctions: Proposal and Investigation

Cumulative Point&#x2014;L<sub>1</sub> Between Two Positively Charged Plasma Structures (3-D Strata)

In-Built N<sup>&#x002B;</sup> Pocket p-n-p-n Tunnel Field-Effect Transistor

Measurement of axonal fiber connectivity in consciousness evaluation

Cumulative Point—L<sub>1</sub> Between Two Positively Charged Plasma Structures (3-D Strata)

In-Built N<sup>+</sup> Pocket p-n-p-n Tunnel Field-Effect Transistor