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نمایش تعداد 1-10 از 19

Diamond Metal–Semiconductor Field-Effect Transistor With Breakdown Voltage Over 1.5 kV

نوع: Journal Paper

نویسنده : Umezawa, Hitoshi; Matsumoto, Tad; Shikata, Shin-ichi

ناشر: IEEE

سال: 2014

Gate Technology Contributions to Collapse of Drain Current in AlGaN/GaN Schottky HEMT

نوع: Journal Paper

نویسنده : Kawanago, T.; Kakushima, K.; Kataoka, Yasuyuki; Nishiyama, A.; Sugii, Nobuyuki; Wakabayashi, H.; Tsutsui, K.; Natori, K.; Iwai, Hisato

ناشر: IEEE

سال: 2014

TiO<sub>2</sub>-Dielectric AlGaN/GaN/Si Metal-Oxide-Semiconductor High Electron Mobility Transistors by Using Nonvacuum Ultrasonic Spray Pyrolysis Deposition

نوع: Journal Paper

نویسنده : Bo-Yi Chou; Ching-Sung Lee; Cheng-Long Yang; Wei-Chou Hsu; Han-Yin Liu; Meng-Hsueh Chiang; Wen-Ching Sun; Sung-Yen Wei; Sheng-Min Yu

ناشر: IEEE

سال: 2014

Voltage regulation considerations for the design of hybrid distribution transformers

نوع: Conference Paper

نویسنده : Radi, M.A.; Darwish, M.; Alqarni, M.

ناشر: IEEE

سال: 2014

Optimized Pre-Treatment Process for MOS-GaN Devices Passivation

نوع: Journal Paper

نویسنده : Chakroun, Ahmed; Maher, Hassan; Al Alam, Elias; Souifi, Abdelkader; Aimez, Vincent; Ares, Richard; Jaouad, Abdelatif

ناشر: IEEE

سال: 2014

Improving Self-Heating Effect and Maximum Power Density in SOI MESFETs by Using the Hole’s Well Under Channel

نوع: Journal Paper

نویسنده : Ramezani, Zahra; Orouji, Ali Asghar

ناشر: IEEE

سال: 2014

Monolithically Integrated MESFET Devices on a High-Speed Silicon Photonics Platform

نوع: Journal Paper

نویسنده : Novack, Ari; Shi, Ruoyun; Streshinsky, Matthew; Jingcheng Tao; Kang Tan; Lim, Andy Eu-Jin; Guo-Qiang Lo; Baehr-Jones, Tom; Hochberg, Michael

ناشر: IEEE

سال: 2014

Proton Radiation-Induced Void Formation in Ni/Au-Gated AlGaN/GaN HEMTs

نوع: Journal Paper

نویسنده : Koehler, Andrew D.; Specht, Petra; Anderson, Travis J.; Weaver, Bradley D.; Greenlee, Jordan D.; Tadjer, Marko J.; Porter, Matthew; Wade, Mark; Dubon, Oscar C.; Hobart, Karl D.; Weatherford, Todd R.; Kub, Francis J.

ناشر: IEEE

سال: 2014

Asymmetric Gate Schottky-Barrier Graphene Nanoribbon FETs for Low-Power Design

نوع: Journal Paper

نویسنده : Gholipour, M.; Masoumi, N.; Chen, Y.-Y.C.; Deming Chen; Pourfath, M.

ناشر: IEEE

سال: 2014

Unsignalized cooperative optimization control method based on vehicle speed guidance and information interaction

نوع: Conference Paper

نویسنده : Cai, Baigen; Ziru Zheng; Wei ShangGuan; Jian Wang

ناشر: IEEE

سال: 2014

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Diamond Metal–Semiconductor Field-Effect Transistor With Breakdown Voltage Over 1.5 kV

Gate Technology Contributions to Collapse of Drain Current in AlGaN/GaN Schottky HEMT

TiO<sub>2</sub>-Dielectric AlGaN/GaN/Si Metal-Oxide-Semiconductor High Electron Mobility Transistors by Using Nonvacuum Ultrasonic Spray Pyrolysis Deposition

Voltage regulation considerations for the design of hybrid distribution transformers

Optimized Pre-Treatment Process for MOS-GaN Devices Passivation

Improving Self-Heating Effect and Maximum Power Density in SOI MESFETs by Using the Hole’s Well Under Channel

Monolithically Integrated MESFET Devices on a High-Speed Silicon Photonics Platform

Proton Radiation-Induced Void Formation in Ni/Au-Gated AlGaN/GaN HEMTs

Asymmetric Gate Schottky-Barrier Graphene Nanoribbon FETs for Low-Power Design

Unsignalized cooperative optimization control method based on vehicle speed guidance and information interaction

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Diamond Metal&#x2013;Semiconductor Field-Effect Transistor With Breakdown Voltage Over 1.5 kV

Gate Technology Contributions to Collapse of Drain Current in AlGaN/GaN Schottky HEMT

TiO<sub>2</sub>-Dielectric AlGaN/GaN/Si Metal-Oxide-Semiconductor High Electron Mobility Transistors by Using Nonvacuum Ultrasonic Spray Pyrolysis Deposition

Voltage regulation considerations for the design of hybrid distribution transformers

Optimized Pre-Treatment Process for MOS-GaN Devices Passivation

Improving Self-Heating Effect and Maximum Power Density in SOI MESFETs by Using the Hole&#x2019;s Well Under Channel

Monolithically Integrated MESFET Devices on a High-Speed Silicon Photonics Platform

Proton Radiation-Induced Void Formation in Ni/Au-Gated AlGaN/GaN HEMTs

Asymmetric Gate Schottky-Barrier Graphene Nanoribbon FETs for Low-Power Design

Unsignalized cooperative optimization control method based on vehicle speed guidance and information interaction

Diamond Metal–Semiconductor Field-Effect Transistor With Breakdown Voltage Over 1.5 kV

Improving Self-Heating Effect and Maximum Power Density in SOI MESFETs by Using the Hole’s Well Under Channel