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نمایش تعداد 1-10 از 12

Single-Event Transients in Bipolar Linear Integrated Circuits

نوع: Journal Paper

نویسنده : Buchner, Stephen; McMorrow, Dale

سال: 2006

A Dosimetry Methodology for Two-Photon Absorption Induced Single-Event Effects Measurements

نوع: Journal Paper

نویسنده : Khachatrian, Ani; Roche, Nicholas J.-H; McMorrow, Dale; Warner, Jeffrey H.; Buchner, Stephen P.; Melinger, Joseph S.

ناشر: IEEE

سال: 2014

Ion-Induced Charge-Collection Transients in p-Channel AlGaSb/InGaSb Heterojunction Field-Effect Transistors

نوع: Journal Paper

نویسنده : Warner, Jeffrey H.; McMorrow, Dale; Buchner, Steffen; Boos, J. Brad; Bennett, Brian R.; Cress, Cory D.; Champlain, James G.; Roche, Nicholas J.-H; Paillet, P.; Gaillardin, M.

ناشر: IEEE

سال: 2014

Comparative Analysis of Mechanical Strain and Silicon Film Thickness on Charge Collection Mechanisms of Nanometer Scaled SOI Devices Under Heavy Ion and Pulsed Laser Irradiation

نوع: Journal Paper

نویسنده : Gaillardin, M.; Raine, M.; Duhamel, O.; Girard, S.; Paillet, P.; McMorrow, Dale; Warner, Jeffrey H.; Andrieu, F.; Barraud, S.; Faynot, O.; Roche, Nicholas J.-H

ناشر: IEEE

سال: 2014

Simulation of Light-Matter Interaction and Two-Photon Absorption Induced Charge Deposition by Ultrashort Optical Pulses in Silicon

نوع: Journal Paper

نویسنده : Hales, Joel M.; McMorrow, Dale; Roche, Nicholas J.-H; Khachatrian, Ani; Warner, Jeffrey H.; Buchner, Stephen P.; Melinger, Joseph S.; Perry, Joseph W.; Lotshaw, William T.; Dubikovsky, Vladislav

ناشر: IEEE

سال: 2014

Evaluating the Effects of Single Event Transients in FET-Based Single-Pole Double-Throw RF Switches

نوع: Journal Paper

نویسنده : Cardoso, Adilson S.; Chakraborty, Partha S.; Lourenco, Nelson E.; England, Troy D.; Saha, Prabirkumar; Howard, Duane C.; Fleischhauer, David M.; Warner, Jeffrey H.; McMorrow, Dale; Buchner, Stephen P.; Paki-Amouzou, Pauline; Thrivikraman, Tushar K.; Cressler, John D.

ناشر: IEEE

سال: 2014

Mitigation of Single-Event Charge Sharing in a Commercial FPGA Architecture

نوع: Journal Paper

نویسنده : Kelly, Andrew T.; Alles, Michael L.; Ball, D.R.; Massengill, Lloyd W.; Ramaswamy, Srini; Haddad, Nadim F.; Brown, Ronald D.; Fleming, Patrick R.; Chan, Erwin Hoi Wing; Ekanayake, Virantha; Kelly, Clinton W.; Pelosi, Christopher; McMorrow, Dale; Buchner, Stephen P.; Warner, Jeffrey H.; Berg, Melanie D.

ناشر: IEEE

سال: 2014

Single-Event Transient and Total Dose Response of Precision Voltage Reference Circuits Designed in a 90-nm SiGe BiCMOS Technology

نوع: Journal Paper

نویسنده : Cardoso, Adilson S.; Chakraborty, Partha S.; Karaulac, Nedeljko; Fleischhauer, David M.; Lourenco, Nelson E.; Fleetwood, Zachary E.; Omprakash, Anup P.; England, Troy D.; Jung, Sanghyuk; Najafizadeh, Laleh; Roche, Nicholas J.-H; Khachatrian, Ani; Warner, Jeffrey H.; McMorrow, Dale; Buchner, Stephen P.; En Xia Zhang; Cher Xuan Zhang; McCurdy, Michael W.; Reed, R.A.; Fleetwood, D.M.; Paki-Amouzou, Pauline; Cressler, John D.

ناشر: IEEE

سال: 2014

An Investigation of Single-Event Transients in C-SiGe HBT on SOI Current Mirror Circuits

نوع: Journal Paper

نویسنده : Seungwoo Jung; Lourenco, Nelson E.; Ickhyun Song; Oakley, Michael /A/.; England, Troy D.; Arora, Rajkumar; Cardoso, Adilson S.; Roche, Nicholas J.-H; Khachatrian, Ani; McMorrow, Dale; Buchner, Stephen P.; Melinger, Joseph S.; Warner, Jeffrey H.; Paki-Amouzou, Pauline; Babcock, Jeff /A/.; Cressler, John D.

ناشر: IEEE

سال: 2014

Design of Radiation-Hardened RF Low-Noise Amplifiers Using Inverse-Mode SiGe HBTs

نوع: Journal Paper

نویسنده : Ickhyun Song; Seungwoo Jung; Lourenco, Nelson E.; Raghunathan, Uppili S.; Fleetwood, Zachary E.; Zeinolabedinzadeh, Saeed; Gebremariam, Tikurete B.; Inanlou, Farzad; Roche, Nicholas J.-H; Khachatrian, Ani; McMorrow, Dale; Buchner, Stephen P.; Melinger, Joseph S.; Warner, Jeffrey H.; Paki-Amouzou, Pauline; Cressler, John D.

ناشر: IEEE

سال: 2014

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Single-Event Transients in Bipolar Linear Integrated Circuits

A Dosimetry Methodology for Two-Photon Absorption Induced Single-Event Effects Measurements

Ion-Induced Charge-Collection Transients in p-Channel AlGaSb/InGaSb Heterojunction Field-Effect Transistors

Comparative Analysis of Mechanical Strain and Silicon Film Thickness on Charge Collection Mechanisms of Nanometer Scaled SOI Devices Under Heavy Ion and Pulsed Laser Irradiation

Simulation of Light-Matter Interaction and Two-Photon Absorption Induced Charge Deposition by Ultrashort Optical Pulses in Silicon

Evaluating the Effects of Single Event Transients in FET-Based Single-Pole Double-Throw RF Switches

Mitigation of Single-Event Charge Sharing in a Commercial FPGA Architecture

Single-Event Transient and Total Dose Response of Precision Voltage Reference Circuits Designed in a 90-nm SiGe BiCMOS Technology

An Investigation of Single-Event Transients in C-SiGe HBT on SOI Current Mirror Circuits

Design of Radiation-Hardened RF Low-Noise Amplifiers Using Inverse-Mode SiGe HBTs

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Single-Event Transients in Bipolar Linear Integrated Circuits

A Dosimetry Methodology for Two-Photon Absorption Induced Single-Event Effects Measurements

Ion-Induced Charge-Collection Transients in p-Channel AlGaSb/InGaSb Heterojunction Field-Effect Transistors

Comparative Analysis of Mechanical Strain and Silicon Film Thickness on Charge Collection Mechanisms of Nanometer Scaled SOI Devices Under Heavy Ion and Pulsed Laser Irradiation

Simulation of Light-Matter Interaction and Two-Photon Absorption Induced Charge Deposition by Ultrashort Optical Pulses in Silicon

Evaluating the Effects of Single Event Transients in FET-Based Single-Pole Double-Throw RF Switches

Mitigation of Single-Event Charge Sharing in a Commercial FPGA Architecture

Single-Event Transient and Total Dose Response of Precision Voltage Reference Circuits Designed in a 90-nm SiGe BiCMOS Technology

An Investigation of Single-Event Transients in C-SiGe HBT on SOI Current Mirror Circuits

Design of Radiation-Hardened RF Low-Noise Amplifiers Using Inverse-Mode SiGe HBTs