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نمایش تعداد 1-10 از 11

A Compression Algorithm for ECG Data Using Variable-Length Classified Template Sets

نوع: Conference Paper

نویسنده : Xin-chao Qu , Yue Zhang

ناشر: IEEE

سال: 2014

Germanium n<sup>+</sup>/p Shallow Junction With Record Rectification Ratio Formed by Low-Temperature Preannealing and Excimer Laser Annealing

نوع: Journal Paper

نویسنده : Chen Wang; Cheng Li; Guangyang Lin; Weifang Lu; Jiangbin Wei; Wei Huang; Hongkai Lai; Songyan Chen; Zengfeng Di; Miao Zhang

ناشر: IEEE

سال: 2014

Germanium p-n Junctions by Laser Doping for Photonics/Microelectronic Devices

نوع: Journal Paper

نویسنده : Yiliang Bao; Keye Sun; Dhar, N.; Gupta, Mool C.

ناشر: IEEE

سال: 2014

Excellent Current Drivability and Environmental Stability in Room-Temperature-Fabricated Pentacene-Based Organic Field-Effect Transistors With <formula formulatype="inline"> <img src="/images/tex/681.gif" alt="{\\rm HfO}_{2}"> </formula> Gate Insulators

نوع: Journal Paper

نویسنده : Min Liao; Ishiwara, Hiroshi; Ohmi, Shun-Ichiro

ناشر: IEEE

سال: 2014

Effect of Substrates on the Structure and Ferroelectric Properties of Multiferroic <formula formulatype="inline"> <img src="/images/tex/21298.gif" alt="{\\hbox {BiFeO}}_{3}"> </formula> Films

نوع: Journal Paper

نویسنده : Chang, H.W.; Yuan, F.T.; Tien, S.H.; Shen, C.Y.; Wang, C.R.; Jen, S.U.

ناشر: IEEE

سال: 2014

ALD TiN Barrier Metal for pMOS Devices With a Chemical Oxide Interfacial Layer for 20-nm Technology Node

نوع: Journal Paper

نویسنده : Ying-Tsung Chen; Chien-Ting Lin; Wen-Tai Chiang; Mon-Sen Lin; Chih-Wei Yang; Jian-Cun Ke; Shoou-Jinn Chang

ناشر: IEEE

سال: 2014

Strip Detectors Processed on High-Resistivity 6-inch Diameter Magnetic Czochralski Silicon (MCz-Si) Substrates

نوع: Journal Paper

نویسنده : Wu, Xiaojie; Harkonen, J.; Kalliopuska, J.; Tuominen, E.; Maenpaa, T.; Luukka, Pasi; Tuovinen, E.; Karadzhinova, A.; Spiegel, Laurie; Eranen, S.; Oja, A.; Haapalinna, A.

ناشر: IEEE

سال: 2014

Key Insertion and Splay Tree Encryption Algorithm for Secure Data Outsourcing in Cloud

نوع: Conference Paper

نویسنده : Rani, A.M.G. , Marimuthu, A.

ناشر: IEEE

سال: 2014

Improved Performance of 365-nm LEDs by Inserting an Un-Doped Electron-Blocking Layer

نوع: Journal Paper

نویسنده : Wen-Yu Lin; Tzu-Yu Wang; Sin-Liang Ou; Jia-Hao Liang; Dong-Sing Wuu

ناشر: IEEE

سال: 2014

Improved Performance of Bottom-Contact Organic Thin-Film Transistor Using Al Doped HfO<sub>2</sub> Gate Dielectric

نوع: Journal Paper

نویسنده : Wing Man Tang; Aboudi, Uraib; Provine, J.; Howe, R.T.; Wong, H.-S Philip

ناشر: IEEE

سال: 2014

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A Compression Algorithm for ECG Data Using Variable-Length Classified Template Sets

Germanium n<sup>+</sup>/p Shallow Junction With Record Rectification Ratio Formed by Low-Temperature Preannealing and Excimer Laser Annealing

Germanium p-n Junctions by Laser Doping for Photonics/Microelectronic Devices

Excellent Current Drivability and Environmental Stability in Room-Temperature-Fabricated Pentacene-Based Organic Field-Effect Transistors With <formula formulatype="inline"> <img src="/images/tex/681.gif" alt="{\\rm HfO}_{2}"> </formula> Gate Insulators

Effect of Substrates on the Structure and Ferroelectric Properties of Multiferroic <formula formulatype="inline"> <img src="/images/tex/21298.gif" alt="{\\hbox {BiFeO}}_{3}"> </formula> Films

ALD TiN Barrier Metal for pMOS Devices With a Chemical Oxide Interfacial Layer for 20-nm Technology Node

Strip Detectors Processed on High-Resistivity 6-inch Diameter Magnetic Czochralski Silicon (MCz-Si) Substrates

Key Insertion and Splay Tree Encryption Algorithm for Secure Data Outsourcing in Cloud

Improved Performance of 365-nm LEDs by Inserting an Un-Doped Electron-Blocking Layer

Improved Performance of Bottom-Contact Organic Thin-Film Transistor Using Al Doped HfO<sub>2</sub> Gate Dielectric

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A Compression Algorithm for ECG Data Using Variable-Length Classified Template Sets

Germanium n<sup>&#x002B;</sup>/p Shallow Junction With Record Rectification Ratio Formed by Low-Temperature Preannealing and Excimer Laser Annealing

Germanium p-n Junctions by Laser Doping for Photonics/Microelectronic Devices

Excellent Current Drivability and Environmental Stability in Room-Temperature-Fabricated Pentacene-Based Organic Field-Effect Transistors With <formula formulatype="inline"> <img src="/images/tex/681.gif" alt="{\\rm HfO}_{2}"> </formula> Gate Insulators

Effect of Substrates on the Structure and Ferroelectric Properties of Multiferroic <formula formulatype="inline"> <img src="/images/tex/21298.gif" alt="{\\hbox {BiFeO}}_{3}"> </formula> Films

ALD TiN Barrier Metal for pMOS Devices With a Chemical Oxide Interfacial Layer for 20-nm Technology Node

Strip Detectors Processed on High-Resistivity 6-inch Diameter Magnetic Czochralski Silicon (MCz-Si) Substrates

Key Insertion and Splay Tree Encryption Algorithm for Secure Data Outsourcing in Cloud

Improved Performance of 365-nm LEDs by Inserting an Un-Doped Electron-Blocking Layer

Improved Performance of Bottom-Contact Organic Thin-Film Transistor Using Al Doped HfO<sub>2</sub> Gate Dielectric

Germanium n<sup>+</sup>/p Shallow Junction With Record Rectification Ratio Formed by Low-Temperature Preannealing and Excimer Laser Annealing