Search

نمایش تعداد 1-10 از 16

A THEORETICAL STUDY OF SPIN-DEPENDENT TRANSPORT IN HYBRID STRUCTURE CONSIST OF SILICON CARBIDE AND ARMCHAIR GRAPHENE NANORIBBONS

نوع: Journal Paper

نویسنده : ذیهاب صحبت زاده; محمود رضائی رکن آبادی; ناصر شاه طهماسبی; محمد بهدانی; zihub sohbatzadeh; Mahmood Rezaee Roknabadi; Nasser Shahtahmassebi; Mohammad Behdani

سال: 2015

خلاصه:

@ASiCNR is inserted between two AGNR electrodes doped with nitrogen at a concentration of one, two and three nitrogen impurity. The I-V characteristics of various junctions are examined, with the results exhibiting significant negative differential resistance (NDR...

Study of Electron Transport through a C59N Molecule:Rectification Behaviour and Negative Differential Resistance:

نوع: Conference Paper

نویسنده : مهوش عربی دره در; ناصر شاه طهماسبی; Mahvash Arabi Darehdor; Nasser Shahtahmassebi

سال: 2012

خلاصه:

We study electron transport properties through a C59N molecule. Calculations

are based on Green’s function technique. In this study, the

molecule is connected to two semi-infinite metallic electrodes. In ...

Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains

نوع: Journal Paper

نویسنده : Grassi, Roberto; Gnudi, A.; Di Lecce, Valerio; Gnani, Elena; Reggiani, S.; Baccarani, G.

ناشر: IEEE

سال: 2014

Experimental Validation of a Two-Phase Clock Scheme for Fine-Grained Pipelined Circuits Based on Monostable to Bistable Logic Elements

نوع: Journal Paper

نویسنده : Nunez, Juan; Avedillo, Maria J.; Quintana, Jose M.

ناشر: IEEE

سال: 2014

Comparison of interpolation methods in time and frequency domain for the estimation of harmonics and interharmonics according to IEC standard

نوع: Conference Paper

نویسنده : es de Andrade Filho, L. , Ribeiro, P.F.

ناشر: IEEE

سال: 2014

Supervised non-euclidean sparse NMF via bilevel optimization with applications to speech enhancement

نوع: Conference Paper

نویسنده : Sprechmann, P. , Bronstein, A.M. , Sapiro, G.

ناشر: IEEE

سال: 2014

Negative Differential Resistance due to Nonlinearities in Single and Stacked Josephson Junctions

نوع: Journal Paper

نویسنده : Filatrella, Giovanni; Pierro, Vincenzo; Pedersen, Niels Falsig; Sorensen, Mads Peter

ناشر: IEEE

سال: 2014

Physics of the Negative Resistance in the Avalanche <inline-formula> <img src="/images/tex/21664.gif" alt="I{-}V"> </inline-formula> Curve of Field Stop IGBTs: Collector Design Rules for Improved Ruggedness

نوع: Journal Paper

نویسنده : Spirito, P.; Breglio, G.; Irace, A.; Maresca, L.; Napoli, E.; Riccio, M.

ناشر: IEEE

سال: 2014

All-Graphene Planar Double Barrier Resonant Tunneling Diodes

نوع: Journal Paper

نویسنده : Al-Dirini, Feras; Hossain, Faruque M.; Nirmalathas, Ampalavanapillai; Skafidas, E.

ناشر: IEEE

سال: 2014

Bistability Characteristics of GaN/AlN Resonant Tunneling Diodes Caused by Intersubband Transition and Electron Accumulation in Quantum Well

نوع: Journal Paper

نویسنده : Nagase, Masanori; Tokizaki, Takashi

ناشر: IEEE

سال: 2014

Search

A THEORETICAL STUDY OF SPIN-DEPENDENT TRANSPORT IN HYBRID STRUCTURE CONSIST OF SILICON CARBIDE AND ARMCHAIR GRAPHENE NANORIBBONS

Study of Electron Transport through a C59N Molecule:Rectification Behaviour and Negative Differential Resistance:

Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains

Experimental Validation of a Two-Phase Clock Scheme for Fine-Grained Pipelined Circuits Based on Monostable to Bistable Logic Elements

Comparison of interpolation methods in time and frequency domain for the estimation of harmonics and interharmonics according to IEC standard

Supervised non-euclidean sparse NMF via bilevel optimization with applications to speech enhancement

Negative Differential Resistance due to Nonlinearities in Single and Stacked Josephson Junctions

Physics of the Negative Resistance in the Avalanche <inline-formula> <img src="/images/tex/21664.gif" alt="I{-}V"> </inline-formula> Curve of Field Stop IGBTs: Collector Design Rules for Improved Ruggedness

All-Graphene Planar Double Barrier Resonant Tunneling Diodes

Bistability Characteristics of GaN/AlN Resonant Tunneling Diodes Caused by Intersubband Transition and Electron Accumulation in Quantum Well

نویسنده

ناشر

سال

کلیدواژه

نوع

زبان

نوع محتوا

عنوان ناشر

Search

Filters

A THEORETICAL STUDY OF SPIN-DEPENDENT TRANSPORT IN HYBRID STRUCTURE CONSIST OF SILICON CARBIDE AND ARMCHAIR GRAPHENE NANORIBBONS

Study of Electron Transport through a C59N Molecule:Rectification Behaviour and Negative Differential Resistance:

Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains

Experimental Validation of a Two-Phase Clock Scheme for Fine-Grained Pipelined Circuits Based on Monostable to Bistable Logic Elements

Comparison of interpolation methods in time and frequency domain for the estimation of harmonics and interharmonics according to IEC standard

Supervised non-euclidean sparse NMF via bilevel optimization with applications to speech enhancement

Negative Differential Resistance due to Nonlinearities in Single and Stacked Josephson Junctions

Physics of the Negative Resistance in the Avalanche <inline-formula> <img src="/images/tex/21664.gif" alt="I{-}V"> </inline-formula> Curve of Field Stop IGBTs: Collector Design Rules for Improved Ruggedness

All-Graphene Planar Double Barrier Resonant Tunneling Diodes

Bistability Characteristics of GaN/AlN Resonant Tunneling Diodes Caused by Intersubband Transition and Electron Accumulation in Quantum Well