Search

نمایش تعداد 1-8 از 8

A Test Structure to Characterize Nano-Scale Ohmic Contacts in III-V MOSFETs

نوع: Journal Paper

نویسنده : Wenjie Lu; Guo, Anjin; Vardi, Alon; del Alamo, Jesus /A/.

ناشر: IEEE

سال: 2014

A Four-FET Method for Extracting Mobility in FETs Without Field Oxide

نوع: Journal Paper

نویسنده : Majumdar, Angshul; Ko-Tao Lee; Cheng-Wei Cheng; Kuen-Ting Shiu; Sadana, Devendra K.; Leobandung, Effendi

ناشر: IEEE

سال: 2014

Performance Analysis of Geographic Routing Protocols in Ad Hoc Networks

نوع: Conference Paper

نویسنده : Torrieri, Don; Talarico, Salvatore; Valenti, Matthew C.

ناشر: IEEE

سال: 2014

Impact of FinFET and III–V/Ge Technology on Logic and Memory Cell Behavior

نوع: Journal Paper

نویسنده : Amat, Esteve; Calomarde, Antonio; Almudever, C.G.; Aymerich, N.; Canal, Ramon; Rubio, Albert

ناشر: IEEE

سال: 2014

Modelling and Performance Analysis of Wireless Sensor Networks Using Process Mining Techniques: ContikiMAC Use Case

نوع: Conference Paper

نویسنده : Despaux, F. , Ye-Qiong Song , Lahmadi, A.

ناشر: IEEE

سال: 2014

A Novel Digital Etch Technique for Deeply Scaled III-V MOSFETs

نوع: Journal Paper

نویسنده : Jianqiang Lin; Xin Zhao; Antoniadis, Dimitri /A/.; del Alamo, Jesus /A/.

ناشر: IEEE

سال: 2014

Nanometer-Scale Vertical-Sidewall Reactive Ion Etching of InGaAs for 3-D III-V MOSFETs

نوع: Journal Paper

نویسنده : Xin Zhao; del Alamo, Jesus /A/.

ناشر: IEEE

سال: 2014

A framework for improving the performance of verification algorithms with a low false positive rate requirement and limited training data

نوع: Conference Paper

نویسنده : Arandelovic, Ognjen

ناشر: IEEE

سال: 2014

Search

A Test Structure to Characterize Nano-Scale Ohmic Contacts in III-V MOSFETs

A Four-FET Method for Extracting Mobility in FETs Without Field Oxide

Performance Analysis of Geographic Routing Protocols in Ad Hoc Networks

Impact of FinFET and III–V/Ge Technology on Logic and Memory Cell Behavior

Modelling and Performance Analysis of Wireless Sensor Networks Using Process Mining Techniques: ContikiMAC Use Case

A Novel Digital Etch Technique for Deeply Scaled III-V MOSFETs

Nanometer-Scale Vertical-Sidewall Reactive Ion Etching of InGaAs for 3-D III-V MOSFETs

A framework for improving the performance of verification algorithms with a low false positive rate requirement and limited training data

نویسنده

ناشر

سال

کلیدواژه

نوع

زبان

نوع محتوا

عنوان ناشر

Search

Filters

A Test Structure to Characterize Nano-Scale Ohmic Contacts in III-V MOSFETs

A Four-FET Method for Extracting Mobility in FETs Without Field Oxide

Performance Analysis of Geographic Routing Protocols in Ad Hoc Networks

Impact of FinFET and III&#x2013;V/Ge Technology on Logic and Memory Cell Behavior

Modelling and Performance Analysis of Wireless Sensor Networks Using Process Mining Techniques: ContikiMAC Use Case

A Novel Digital Etch Technique for Deeply Scaled III-V MOSFETs

Nanometer-Scale Vertical-Sidewall Reactive Ion Etching of InGaAs for 3-D III-V MOSFETs

A framework for improving the performance of verification algorithms with a low false positive rate requirement and limited training data

Impact of FinFET and III–V/Ge Technology on Logic and Memory Cell Behavior