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Enhancement of Electrical Stability in Oxide Thin-Film Transistors Using Multilayer Channels Grown by Atomic Layer Deposition

Type: Journal Paper

Author : Cheol Hyoun Ahn; Myung Gu Yun; Sang Yeol Lee; Hyung Koun Cho

Publisher: IEEE

Year: 2014

Fluorinated InGaZnO Thin-Film Transistor With HfLaO Gate Dielectric

Type: Journal Paper

Author : Ling Xuan Qian; Lai, P.T.

Publisher: IEEE

Year: 2014

Laterally Coupled IZO-Based Transistors on Free-Standing Proton Conducting Chitosan Membranes

Type: Journal Paper

Author : Jin Zhang; Jiangnan Dai; Liqiang Zhu; Changqing Chen; Qing Wan

Publisher: IEEE

Year: 2014

Reduction of Negative Bias and Light Instability of a-IGZO TFTs by Dual-Gate Driving

Type: Journal Paper

Author : Sejin Hong; Suhui Lee; Mativenga, Mallory; Jin Jang

Publisher: IEEE

Year: 2014

Delayed current zeros in FPSO offshore units

Type: Conference Paper

Author : Hernandes, Leonardo; Marques, Fabiano Zemella; Vasconcellos, Alexandre S.

Publisher: IEEE

Year: 2014

Applications of multimodal physical (IoT), cyber and social data for reliable and actionable insights

Type: Conference Paper

Author : Sheth, A.; Anantharam, P.; Thirunarayan, K.

Publisher: IEEE

Year: 2014

High Mobility Solution-Processed Hafnium Indium Zinc Oxide TFT With an Al-Doped <inline-formula> <img src="/images/tex/21641.gif" alt="{\\rm ZrO}_{2}"> </inline-formula> Gate Dielectric

Type: Journal Paper

Author : Yana Gao; Xifeng Li; Longlong Chen; Jifeng Shi; Xiao Wei Sun; Jianhua Zhang

Publisher: IEEE

Year: 2014

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Enhancement of Electrical Stability in Oxide Thin-Film Transistors Using Multilayer Channels Grown by Atomic Layer Deposition

Fluorinated InGaZnO Thin-Film Transistor With HfLaO Gate Dielectric

Laterally Coupled IZO-Based Transistors on Free-Standing Proton Conducting Chitosan Membranes

Reduction of Negative Bias and Light Instability of a-IGZO TFTs by Dual-Gate Driving

Delayed current zeros in FPSO offshore units

Applications of multimodal physical (IoT), cyber and social data for reliable and actionable insights

High Mobility Solution-Processed Hafnium Indium Zinc Oxide TFT With an Al-Doped <inline-formula> <img src="/images/tex/21641.gif" alt="{\\rm ZrO}_{2}"> </inline-formula> Gate Dielectric

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Enhancement of Electrical Stability in Oxide Thin-Film Transistors Using Multilayer Channels Grown by Atomic Layer Deposition

Fluorinated InGaZnO Thin-Film Transistor With HfLaO Gate Dielectric

Laterally Coupled IZO-Based Transistors on Free-Standing Proton Conducting Chitosan Membranes

Reduction of Negative Bias and Light Instability of a-IGZO TFTs by Dual-Gate Driving

Delayed current zeros in FPSO offshore units

Applications of multimodal physical (IoT), cyber and social data for reliable and actionable insights

High Mobility Solution-Processed Hafnium Indium Zinc Oxide TFT With an Al-Doped <inline-formula> <img src="/images/tex/21641.gif" alt="{\\rm ZrO}_{2}"> </inline-formula> Gate Dielectric