High Mobility Solution-Processed Hafnium Indium Zinc Oxide TFT With an Al-Doped <inline-formula> <img src="/images/tex/21641.gif" alt="{\\rm ZrO}_{2}"> </inline-formula> Gate Dielectric
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سال
: 2014شناسه الکترونیک: 10.1109/LED.2014.2310120
کلیدواژه(گان): aluminium compounds,flat panel displays,hafnium compounds,indium compounds,permittivity,thin film transistors,zinc compounds,zirconium compounds,Al:ZrO<,sub>,2<,/sub>,HfInZnO,ON-OFF ratio,amorphous phase,backplate requirements,flat panel displays,gate dielectric,high mobility solution-processed TFT,high saturation field-effect mobility,relative dielectric constant,root-mean-square roughness,subthreshold swing,temperature 400 degC,temperature 600 degC,thin-film tran
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High Mobility Solution-Processed Hafnium Indium Zinc Oxide TFT With an Al-Doped <inline-formula> <img src="/images/tex/21641.gif" alt="{\\rm ZrO}_{2}"> </inline-formula> Gate Dielectric
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| contributor author | Yana Gao | |
| contributor author | Xifeng Li | |
| contributor author | Longlong Chen | |
| contributor author | Jifeng Shi | |
| contributor author | Xiao Wei Sun | |
| contributor author | Jianhua Zhang | |
| date accessioned | 2020-03-12T23:52:29Z | |
| date available | 2020-03-12T23:52:29Z | |
| date issued | 2014 | |
| identifier issn | 0741-3106 | |
| identifier other | 6767043.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/1126442 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | High Mobility Solution-Processed Hafnium Indium Zinc Oxide TFT With an Al-Doped <inline-formula> <img src="/images/tex/21641.gif" alt="{\\rm ZrO}_{2}"> </inline-formula> Gate Dielectric | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8306284 | |
| subject keywords | aluminium compounds | |
| subject keywords | flat panel displays | |
| subject keywords | hafnium compounds | |
| subject keywords | indium compounds | |
| subject keywords | permittivity | |
| subject keywords | thin film transistors | |
| subject keywords | zinc compounds | |
| subject keywords | zirconium compounds | |
| subject keywords | Al:ZrO< | |
| subject keywords | sub> | |
| subject keywords | 2< | |
| subject keywords | /sub> | |
| subject keywords | HfInZnO | |
| subject keywords | ON-OFF ratio | |
| subject keywords | amorphous phase | |
| subject keywords | backplate requirements | |
| subject keywords | flat panel displays | |
| subject keywords | gate dielectric | |
| subject keywords | high mobility solution-processed TFT | |
| subject keywords | high saturation field-effect mobility | |
| subject keywords | relative dielectric constant | |
| subject keywords | root-mean-square roughness | |
| subject keywords | subthreshold swing | |
| subject keywords | temperature 400 degC | |
| subject keywords | temperature 600 degC | |
| subject keywords | thin-film tran | |
| identifier doi | 10.1109/LED.2014.2310120 | |
| journal title | Electron Device Letters, IEEE | |
| journal volume | 35 | |
| journal issue | 5 | |
| filesize | 950868 | |
| citations | 0 |