The effect of gate length on the operation of ZnO MOSFETs have been simulated. Three transistors

with gate lengths of 100, 200 and 500 nm are simulated. Simulations show that with a fixed channel

length, when ...

in the calculation.

Ionized imurity scattering has been treated beyound the Born approximation using the phase-shift analysis. Two transistors with

gate lengths of 200 and 400 nm are simulated. Simulations show that with a fixed channel length, when...

In this paper a new method for extraction of the channel length and channel resistance as a function of gate-voltage in MOSFET’s is introduced. The method is accurate and calculates the threshold voltages of all devices with different gate...

This paper focuses on the extraction of drain/source resistance and effective channel length (Leff) of the

silicon MOSFET in the linear drain current region. Leff is expressed as a function of drain/source resistance, drain current, threshold...

of 58nm and a gate width of 5μm are successfully performed. The extracted parameters presented in this work include: threshold voltage, effective channel length, series resistance, trans-conductance and onresistance. It should be noted that to reduce...

In this paper an extended drain-current conductance method is introduced, which can be used for extraction of separated drain and source resistors, forward and reversed modes carrier mobilities and effective channel length of MOSFET. The new single...