Privacy as a Tradeoff: Introducing the Notion of Privacy Calculus for Context-Aware Mobile Applications
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: 2014شناسه الکترونیک: 10.1109/ICDCSyst.2014.6926123
کلیدواژه(گان): III-V semiconductors,carrier density,field effect transistors,high electron mobility transistors,indium compounds,logic devices,low-power electronics,quantum well devices,technology CAD (electronics),HEMT,III-V compound semiconductor,InSb,analogue transistors,device OFF current,device threshold voltage,doping concentration,high performance applications,high speed applications,low power logic applications,maximum drain current,physical gate length,quantum well field effect tr
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Privacy as a Tradeoff: Introducing the Notion of Privacy Calculus for Context-Aware Mobile Applications
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| contributor author | Zhan Liu , Jialu Shan , Bonazzi, R. , Pigneur, Y. | |
| date accessioned | 2020-03-12T19:32:24Z | |
| date available | 2020-03-12T19:32:24Z | |
| date issued | 2014 | |
| identifier other | 6758735.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/981117 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Privacy as a Tradeoff: Introducing the Notion of Privacy Calculus for Context-Aware Mobile Applications | |
| type | Conference Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8095648 | |
| subject keywords | III-V semiconductors | |
| subject keywords | carrier density | |
| subject keywords | field effect transistors | |
| subject keywords | high electron mobility transistors | |
| subject keywords | indium compounds | |
| subject keywords | logic devices | |
| subject keywords | low-power electronics | |
| subject keywords | quantum well devices | |
| subject keywords | technology CAD (electronics) | |
| subject keywords | HEMT | |
| subject keywords | III-V compound semiconductor | |
| subject keywords | InSb | |
| subject keywords | analogue transistors | |
| subject keywords | device OFF current | |
| subject keywords | device threshold voltage | |
| subject keywords | doping concentration | |
| subject keywords | high performance applications | |
| subject keywords | high speed applications | |
| subject keywords | low power logic applications | |
| subject keywords | maximum drain current | |
| subject keywords | physical gate length | |
| subject keywords | quantum well field effect tr | |
| identifier doi | 10.1109/ICDCSyst.2014.6926123 | |
| journal title | ystem Sciences (HICSS), 2014 47th Hawaii International Conference on | |
| filesize | 291305 | |
| citations | 0 |