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Analysis of Nanoscale Strained-Si/SiGe MOSFETs including Source/Drain Series Resistance through a Multi-iterative Technique

contributor authorKumari, A. , Kumar, S.
date accessioned2020-03-12T19:30:15Z
date available2020-03-12T19:30:15Z
date issued2014
identifier other6733169.pdf
identifier urihttp://libsearch.um.ac.ir:80/fum/handle/fum/979912?show=full
formatgeneral
languageEnglish
titleAnalysis of Nanoscale Strained-Si/SiGe MOSFETs including Source/Drain Series Resistance through a Multi-iterative Technique
typeConference Paper
contenttypeMetadata Only
identifier padid8094099
subject keywordsX-ray diffraction
subject keywordscopper compounds
subject keywordscrystal morphology
subject keywordsevaporation
subject keywordsgallium compounds
subject keywordsindium compounds
subject keywordsscanning electron microscopy
subject keywordsselenium compounds
subject keywordssemiconductor growth
subject keywordssemiconductor thin films
subject keywordssilver compounds
subject keywords(AgCu)(InGa)Se<
subject keywordssub>
subject keywords2<
subject keywords/sub>
subject keywordschalcopyrite layers
subject keywordsdeposition
subject keywordselectron volt energy 1.3 eV to 1.6 eV
subject keywordsglancing incidence X-ray diffraction measurements
subject keywordsgroup I-rich growth characterization
subject keywordsliquid phase
subject keywordsmorphology
subject keywordsplan-view images
subject keywordsscanning electron microscope
subject keywordssi
identifier doi10.1109/PVSC.2014.6924925
journal titleLSI Design and 2014 13th International Conference on Embedded Systems, 2014 27th International Confe
filesize311665
citations0


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