Analysis of Nanoscale Strained-Si/SiGe MOSFETs including Source/Drain Series Resistance through a Multi-iterative Technique
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: 2014DOI: 10.1109/PVSC.2014.6924925
Keyword(s): X-ray diffraction,copper compounds,crystal morphology,evaporation,gallium compounds,indium compounds,scanning electron microscopy,selenium compounds,semiconductor growth,semiconductor thin films,silver compounds,(AgCu)(InGa)Se<,sub>,2<,/sub>,chalcopyrite layers,deposition,electron volt energy 1.3 eV to 1.6 eV,glancing incidence X-ray diffraction measurements,group I-rich growth characterization,liquid phase,morphology,plan-view images,scanning electron microscope,si
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Analysis of Nanoscale Strained-Si/SiGe MOSFETs including Source/Drain Series Resistance through a Multi-iterative Technique
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| contributor author | Kumari, A. , Kumar, S. | |
| date accessioned | 2020-03-12T19:30:15Z | |
| date available | 2020-03-12T19:30:15Z | |
| date issued | 2014 | |
| identifier other | 6733169.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/979912 | |
| format | general | |
| language | English | |
| title | Analysis of Nanoscale Strained-Si/SiGe MOSFETs including Source/Drain Series Resistance through a Multi-iterative Technique | |
| type | Conference Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8094099 | |
| subject keywords | X-ray diffraction | |
| subject keywords | copper compounds | |
| subject keywords | crystal morphology | |
| subject keywords | evaporation | |
| subject keywords | gallium compounds | |
| subject keywords | indium compounds | |
| subject keywords | scanning electron microscopy | |
| subject keywords | selenium compounds | |
| subject keywords | semiconductor growth | |
| subject keywords | semiconductor thin films | |
| subject keywords | silver compounds | |
| subject keywords | (AgCu)(InGa)Se< | |
| subject keywords | sub> | |
| subject keywords | 2< | |
| subject keywords | /sub> | |
| subject keywords | chalcopyrite layers | |
| subject keywords | deposition | |
| subject keywords | electron volt energy 1.3 eV to 1.6 eV | |
| subject keywords | glancing incidence X-ray diffraction measurements | |
| subject keywords | group I-rich growth characterization | |
| subject keywords | liquid phase | |
| subject keywords | morphology | |
| subject keywords | plan-view images | |
| subject keywords | scanning electron microscope | |
| subject keywords | si | |
| identifier doi | 10.1109/PVSC.2014.6924925 | |
| journal title | LSI Design and 2014 13th International Conference on Embedded Systems, 2014 27th International Confe | |
| filesize | 311665 | |
| citations | 0 |