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Electrical Properties of HfTiON Gate-Dielectric GaAs Metal-Oxide-Semiconductor Capacitor With AlON as Interlayer

contributor authorLi-Sheng Wang
contributor authorLu Liu
contributor authorJing-Ping Xu
contributor authorShu-Yan Zhu
contributor authorYuan Huang
contributor authorPui-To Lai
date accessioned2020-03-12T18:41:11Z
date available2020-03-12T18:41:11Z
date issued2014
identifier issn0018-9383
identifier other6714847.pdf
identifier urihttp://libsearch.um.ac.ir:80/fum/handle/fum/966844?show=full
formatgeneral
languageEnglish
publisherIEEE
titleElectrical Properties of HfTiON Gate-Dielectric GaAs Metal-Oxide-Semiconductor Capacitor With AlON as Interlayer
typeJournal Paper
contenttypeMetadata Only
identifier padid8000734
subject keywordsMOS capacitors
subject keywordscircuit reliability
subject keywordselectric properties
subject keywordsgallium arsenide
subject keywordshafnium compounds
subject keywordsoxygen compounds
subject keywordstitanium compounds
subject keywordsAl-HfTiON-AlON-GaAs
subject keywordsFemi level
subject keywordsIPL
subject keywordsdefective states
subject keywordsdielectric constant
subject keywordselectrical properties
subject keywordsgate leakage current
subject keywordshigh device reliability
subject keywordshigh- k gate-dielectric MOS capacitors
subject keywordsinterfacial passivation layer
subject keywordsinterfacial properties
subject keywordslow interface-state density
subject keywordsmetal-oxide-semiconductor capacitor
subject keywordssize 1.72 nm
subject keywordssulfur-passivation
subject keywordsvoltage 1 V
subject keywordsDielectrics
identifier doi10.1109/TED.2014.2297995
journal titleElectron Devices, IEEE Transactions on
journal volume61
journal issue3
filesize2397106
citations0


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