Electrical Properties of HfTiON Gate-Dielectric GaAs Metal-Oxide-Semiconductor Capacitor With AlON as Interlayer
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: 2014شناسه الکترونیک: 10.1109/TED.2014.2297995
کلیدواژه(گان): MOS capacitors,circuit reliability,electric properties,gallium arsenide,hafnium compounds,oxygen compounds,titanium compounds,Al-HfTiON-AlON-GaAs,Femi level,IPL,defective states,dielectric constant,electrical properties,gate leakage current,high device reliability,high- k gate-dielectric MOS capacitors,interfacial passivation layer,interfacial properties,low interface-state density,metal-oxide-semiconductor capacitor,size 1.72 nm,sulfur-passivation,voltage 1 V,Dielectrics
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Electrical Properties of HfTiON Gate-Dielectric GaAs Metal-Oxide-Semiconductor Capacitor With AlON as Interlayer
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| contributor author | Li-Sheng Wang | |
| contributor author | Lu Liu | |
| contributor author | Jing-Ping Xu | |
| contributor author | Shu-Yan Zhu | |
| contributor author | Yuan Huang | |
| contributor author | Pui-To Lai | |
| date accessioned | 2020-03-12T18:41:11Z | |
| date available | 2020-03-12T18:41:11Z | |
| date issued | 2014 | |
| identifier issn | 0018-9383 | |
| identifier other | 6714847.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/966844?locale-attribute=fa | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Electrical Properties of HfTiON Gate-Dielectric GaAs Metal-Oxide-Semiconductor Capacitor With AlON as Interlayer | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8000734 | |
| subject keywords | MOS capacitors | |
| subject keywords | circuit reliability | |
| subject keywords | electric properties | |
| subject keywords | gallium arsenide | |
| subject keywords | hafnium compounds | |
| subject keywords | oxygen compounds | |
| subject keywords | titanium compounds | |
| subject keywords | Al-HfTiON-AlON-GaAs | |
| subject keywords | Femi level | |
| subject keywords | IPL | |
| subject keywords | defective states | |
| subject keywords | dielectric constant | |
| subject keywords | electrical properties | |
| subject keywords | gate leakage current | |
| subject keywords | high device reliability | |
| subject keywords | high- k gate-dielectric MOS capacitors | |
| subject keywords | interfacial passivation layer | |
| subject keywords | interfacial properties | |
| subject keywords | low interface-state density | |
| subject keywords | metal-oxide-semiconductor capacitor | |
| subject keywords | size 1.72 nm | |
| subject keywords | sulfur-passivation | |
| subject keywords | voltage 1 V | |
| subject keywords | Dielectrics | |
| identifier doi | 10.1109/TED.2014.2297995 | |
| journal title | Electron Devices, IEEE Transactions on | |
| journal volume | 61 | |
| journal issue | 3 | |
| filesize | 2397106 | |
| citations | 0 |