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ALD TiN Barrier Metal for pMOS Devices With a Chemical Oxide Interfacial Layer for 20-nm Technology Node

contributor authorYing-Tsung Chen
contributor authorChien-Ting Lin
contributor authorWen-Tai Chiang
contributor authorMon-Sen Lin
contributor authorChih-Wei Yang
contributor authorJian-Cun Ke
contributor authorShoou-Jinn Chang
date accessioned2020-03-12T18:40:48Z
date available2020-03-12T18:40:48Z
date issued2014
identifier issn0741-3106
identifier other6714375.pdf
identifier urihttp://libsearch.um.ac.ir:80/fum/handle/fum/966621?show=full
formatgeneral
languageEnglish
publisherIEEE
titleALD TiN Barrier Metal for pMOS Devices With a Chemical Oxide Interfacial Layer for 20-nm Technology Node
typeJournal Paper
contenttypeMetadata Only
identifier padid8000455
subject keywordsMIS devices
subject keywordsatomic layer deposition
subject keywordshigh-k dielectric thin films
subject keywordsleakage currents
subject keywordsnanotechnology
subject keywordstitanium compounds
subject keywordswork function
subject keywordsALD TiN barrier metal
subject keywordsTiN
subject keywordsatomic layer deposition
subject keywordschemical oxide interfacial layer
subject keywordsequivalent oxide thickness
subject keywordsequivalent work function
subject keywordsflat-band voltage
subject keywordsgate leakage current density
subject keywordshigh-k last-gate last pMOS devices
subject keywordssize 20 nm
subject keywordstechnology node
subject keywordsChemicals
subject keywordsHigh K dielectric materials
subject keywordsLogic gates
subject keywordsMOS devices
subject keywordsPerformance evaluation
subject keywordsTin
subject keywordsFlatband volt
identifier doi10.1109/LED.2013.2297341
journal titleElectron Device Letters, IEEE
journal volume35
journal issue3
filesize775846
citations0


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