ALD TiN Barrier Metal for pMOS Devices With a Chemical Oxide Interfacial Layer for 20-nm Technology Node
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: 2014شناسه الکترونیک: 10.1109/LED.2013.2297341
کلیدواژه(گان): MIS devices,atomic layer deposition,high-k dielectric thin films,leakage currents,nanotechnology,titanium compounds,work function,ALD TiN barrier metal,TiN,atomic layer deposition,chemical oxide interfacial layer,equivalent oxide thickness,equivalent work function,flat-band voltage,gate leakage current density,high-k last-gate last pMOS devices,size 20 nm,technology node,Chemicals,High K dielectric materials,Logic gates,MOS devices,Performance evaluation,Tin,Flatband volt
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ALD TiN Barrier Metal for pMOS Devices With a Chemical Oxide Interfacial Layer for 20-nm Technology Node
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| contributor author | Ying-Tsung Chen | |
| contributor author | Chien-Ting Lin | |
| contributor author | Wen-Tai Chiang | |
| contributor author | Mon-Sen Lin | |
| contributor author | Chih-Wei Yang | |
| contributor author | Jian-Cun Ke | |
| contributor author | Shoou-Jinn Chang | |
| date accessioned | 2020-03-12T18:40:48Z | |
| date available | 2020-03-12T18:40:48Z | |
| date issued | 2014 | |
| identifier issn | 0741-3106 | |
| identifier other | 6714375.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/966621 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | ALD TiN Barrier Metal for pMOS Devices With a Chemical Oxide Interfacial Layer for 20-nm Technology Node | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8000455 | |
| subject keywords | MIS devices | |
| subject keywords | atomic layer deposition | |
| subject keywords | high-k dielectric thin films | |
| subject keywords | leakage currents | |
| subject keywords | nanotechnology | |
| subject keywords | titanium compounds | |
| subject keywords | work function | |
| subject keywords | ALD TiN barrier metal | |
| subject keywords | TiN | |
| subject keywords | atomic layer deposition | |
| subject keywords | chemical oxide interfacial layer | |
| subject keywords | equivalent oxide thickness | |
| subject keywords | equivalent work function | |
| subject keywords | flat-band voltage | |
| subject keywords | gate leakage current density | |
| subject keywords | high-k last-gate last pMOS devices | |
| subject keywords | size 20 nm | |
| subject keywords | technology node | |
| subject keywords | Chemicals | |
| subject keywords | High K dielectric materials | |
| subject keywords | Logic gates | |
| subject keywords | MOS devices | |
| subject keywords | Performance evaluation | |
| subject keywords | Tin | |
| subject keywords | Flatband volt | |
| identifier doi | 10.1109/LED.2013.2297341 | |
| journal title | Electron Device Letters, IEEE | |
| journal volume | 35 | |
| journal issue | 3 | |
| filesize | 775846 | |
| citations | 0 |