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BSIM6: Analog and RF Compact Model for Bulk MOSFET

contributor authorChauhan, Yogesh Singh
contributor authorVenugopalan, Sarad
contributor authorChalkiadaki, Maria-Anna
contributor authorKarim, Muhammed Ahosan Ul
contributor authorAgarwal, Harshit
contributor authorKhandelwal, Sourabh
contributor authorPaydavosi, Navid
contributor authorDuarte, Juan Pablo
contributor authorEnz, C.C.
contributor authorNiknejad, Ali M.
contributor authorChenming Hu
date accessioned2020-03-12T18:30:00Z
date available2020-03-12T18:30:00Z
date issued2014
identifier issn0018-9383
identifier other6632892.pdf
identifier urihttp://libsearch.um.ac.ir:80/fum/handle/fum/960573?show=full
formatgeneral
languageEnglish
publisherIEEE
titleBSIM6: Analog and RF Compact Model for Bulk MOSFET
typeJournal Paper
contenttypeMetadata Only
identifier padid7993261
subject keywordsMOSFET
subject keywordsradiofrequency integrated circuits
subject keywordssemiconductor device models
subject keywordsBSIM4 model
subject keywordsBSIM6 model
subject keywordsRF circuit design
subject keywordsRF circuit simulation
subject keywordsRF compact model
subject keywordsanalog circuit design
subject keywordsbulk MOSFET model
subject keywordsharmonic balance simulation
subject keywordsphysical charge based capacitance model
subject keywordspolydepletion
subject keywordsquantum mechanical effect
subject keywordssize 40 nm
subject keywordssource drain symmetry
subject keywordsCapacitance
subject keywordsComputational modeling
subject keywordsIntegrated circuit modeling
subject keywordsLogic gates
subject keywordsMOSFET
subject keywordsRadio frequency
subject keywordsSemiconductor device modeling
subject keywordsAnalog
subject keywordsBSIM4
subject keywordsBS
identifier doi10.1109/TED.2013.2283084
journal titleElectron Devices, IEEE Transactions on
journal volume61
journal issue2
filesize2004019
citations0


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