BSIM6: Analog and RF Compact Model for Bulk MOSFET

نویسنده:

ناشر:

IEEE

سال

: 2014

شناسه الکترونیک: 10.1109/TED.2013.2283084

یو آر آی: http://libsearch.um.ac.ir:80/fum/handle/fum/960573

کلیدواژه(گان): MOSFET,radiofrequency integrated circuits,semiconductor device models,BSIM4 model,BSIM6 model,RF circuit design,RF circuit simulation,RF compact model,analog circuit design,bulk MOSFET model,harmonic balance simulation,physical charge based capacitance model,polydepletion,quantum mechanical effect,size 40 nm,source drain symmetry,Capacitance,Computational modeling,Integrated circuit modeling,Logic gates,MOSFET,Radio frequency,Semiconductor device modeling,Analog,BSIM4,BS

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BSIM6: Analog and RF Compact Model for Bulk MOSFET

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contributor author	Chauhan, Yogesh Singh
contributor author	Venugopalan, Sarad
contributor author	Chalkiadaki, Maria-Anna
contributor author	Karim, Muhammed Ahosan Ul
contributor author	Agarwal, Harshit
contributor author	Khandelwal, Sourabh
contributor author	Paydavosi, Navid
contributor author	Duarte, Juan Pablo
contributor author	Enz, C.C.
contributor author	Niknejad, Ali M.
contributor author	Chenming Hu
date accessioned	2020-03-12T18:30:00Z
date available	2020-03-12T18:30:00Z
date issued	2014
identifier issn	0018-9383
identifier other	6632892.pdf
identifier uri	http://libsearch.um.ac.ir:80/fum/handle/fum/960573
format	general
language	English
publisher	IEEE
title	BSIM6: Analog and RF Compact Model for Bulk MOSFET
type	Journal Paper
contenttype	Metadata Only
identifier padid	7993261
subject keywords	MOSFET
subject keywords	radiofrequency integrated circuits
subject keywords	semiconductor device models
subject keywords	BSIM4 model
subject keywords	BSIM6 model
subject keywords	RF circuit design
subject keywords	RF circuit simulation
subject keywords	RF compact model
subject keywords	analog circuit design
subject keywords	bulk MOSFET model
subject keywords	harmonic balance simulation
subject keywords	physical charge based capacitance model
subject keywords	polydepletion
subject keywords	quantum mechanical effect
subject keywords	size 40 nm
subject keywords	source drain symmetry
subject keywords	Capacitance
subject keywords	Computational modeling
subject keywords	Integrated circuit modeling
subject keywords	Logic gates
subject keywords	MOSFET
subject keywords	Radio frequency
subject keywords	Semiconductor device modeling
subject keywords	Analog
subject keywords	BSIM4
subject keywords	BS
identifier doi	10.1109/TED.2013.2283084
journal title	Electron Devices, IEEE Transactions on
journal volume	61
journal issue	2
filesize	2004019
citations	0